Large-area few-layer MoS2 deposited by sputtering

Jyun Hong Huang, Hsing Hung Chen, Pang Shiuan Liu, Li Syuan Lu, Chien Ting Wu, Cheng Tung Chou, Yao Jen Lee, Lain Jong Li, Wen-Hao Chang, Tuo-Hung Hou

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37 Scopus citations


Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS 2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS 2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS 2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1 -1 m with a trap charge density in grain boundaries of the order of 1013 cm -2 .

Original languageEnglish
Article number065007
JournalMaterials Research Express
Issue number6
StatePublished - 1 Jun 2016


  • MoS2
  • Sputter
  • Transition metal dichalcogenide


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