Large-area few-layer MoS2 deposited by sputtering

Jyun Hong Huang; Hsing Hung Chen; Pang Shiuan Liu; Li Syuan Lu; Chien Ting Wu; Cheng Tung Chou; Yao Jen Lee; Lain Jong Li; Wen-Hao Chang; Tuo-Hung Hou

doi:10.1088/2053-1591/3/6/065007

Large-area few-layer MoS₂ deposited by sputtering

Jyun Hong Huang, Hsing Hung Chen, Pang Shiuan Liu, Li Syuan Lu, Chien Ting Wu, Cheng Tung Chou, Yao Jen Lee, Lain Jong Li, Wen-Hao Chang, Tuo-Hung Hou

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS ₂ deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS ₂ was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS ₂ channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1 ^-1 m with a trap charge density in grain boundaries of the order of 1013 cm ^-2 .

Original language	English
Article number	065007
Journal	Materials Research Express
Volume	3
Issue number	6
DOIs	https://doi.org/10.1088/2053-1591/3/6/065007
State	Published - 1 Jun 2016

Keywords

MoS2
Sputter
Transition metal dichalcogenide

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10.1088/2053-1591/3/6/065007

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title = "Large-area few-layer MoS2 deposited by sputtering",

abstract = " Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS 2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS 2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS 2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1 -1 m with a trap charge density in grain boundaries of the order of 1013 cm -2 . ",

keywords = "MoS2, Sputter, Transition metal dichalcogenide",

author = "Huang, {Jyun Hong} and Chen, {Hsing Hung} and Liu, {Pang Shiuan} and Lu, {Li Syuan} and Wu, {Chien Ting} and Chou, {Cheng Tung} and Lee, {Yao Jen} and Li, {Lain Jong} and Wen-Hao Chang and Tuo-Hung Hou",

year = "2016",

month = jun,

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doi = "10.1088/2053-1591/3/6/065007",

language = "English",

volume = "3",

journal = "Materials Research Express",

issn = "2053-1591",

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T1 - Large-area few-layer MoS2 deposited by sputtering

AU - Huang, Jyun Hong

AU - Chen, Hsing Hung

AU - Liu, Pang Shiuan

AU - Lu, Li Syuan

AU - Wu, Chien Ting

AU - Chou, Cheng Tung

AU - Lee, Yao Jen

AU - Li, Lain Jong

AU - Chang, Wen-Hao

AU - Hou, Tuo-Hung

PY - 2016/6/1

Y1 - 2016/6/1

N2 - Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS 2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS 2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS 2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1 -1 m with a trap charge density in grain boundaries of the order of 1013 cm -2 .

AB - Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS 2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS 2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS 2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1 -1 m with a trap charge density in grain boundaries of the order of 1013 cm -2 .

KW - MoS2

KW - Sputter

KW - Transition metal dichalcogenide

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U2 - 10.1088/2053-1591/3/6/065007

DO - 10.1088/2053-1591/3/6/065007

M3 - Article

AN - SCOPUS:84978372430

SN - 2053-1591

VL - 3

JO - Materials Research Express

JF - Materials Research Express

IS - 6

M1 - 065007

ER -

Large-area few-layer MoS₂ deposited by sputtering

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Keywords

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