Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Sun Jung Kim; Byung Jin Cho; Ming Fu Li; Chunxiang Zhu; Albert Chin; Dim Lee Kwong

doi:10.1109/LED.2003.814024

Lanthanide (Tb)-doped HfO₂ for high-density MIM capacitors

Sun Jung Kim, Byung Jin Cho^*, Ming Fu Li, Chunxiang Zhu, Albert Chin, Dim Lee Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

22 Scopus citations

Abstract

A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO₂ dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO₂ dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO₂. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/μm² with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.

Original language	English
Pages (from-to)	442-444
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	24
Issue number	7
DOIs	https://doi.org/10.1109/LED.2003.814024
State	Published - Jul 2003

Keywords

Capacitance density
Co-sputtering
HfO
Lanthanide
Metal-insulator-metal (MIM) capacitor
Voltage coefficient of capacitor (VCC)

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10.1109/LED.2003.814024

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title = "Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors",

abstract = "A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/μm2 with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.",

keywords = "Capacitance density, Co-sputtering, HfO, Lanthanide, Metal-insulator-metal (MIM) capacitor, Voltage coefficient of capacitor (VCC)",

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T1 - Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

AU - Kim, Sun Jung

AU - Cho, Byung Jin

AU - Li, Ming Fu

AU - Zhu, Chunxiang

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2003/7

Y1 - 2003/7

N2 - A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/μm2 with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.

AB - A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/μm2 with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.

KW - Capacitance density

KW - Co-sputtering

KW - HfO

KW - Lanthanide

KW - Metal-insulator-metal (MIM) capacitor

KW - Voltage coefficient of capacitor (VCC)

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U2 - 10.1109/LED.2003.814024

DO - 10.1109/LED.2003.814024

M3 - Letter

AN - SCOPUS:0042388021

SN - 0741-3106

VL - 24

SP - 442

EP - 444

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 7

ER -

Lanthanide (Tb)-doped HfO₂ for high-density MIM capacitors

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Keywords

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