Lanthanide-oxides mixed TiO 2 dielectrics for high-κ MIM capacitors

C. H. Cheng; C. K. Deng; H. H. Hsu; P. C. Chen; B. H. Liou; Albert Chin; F. S. Yeh

doi:10.1149/1.3439668

Lanthanide-oxides mixed TiO ₂ dielectrics for high-κ MIM capacitors

C. H. Cheng, C. K. Deng, H. H. Hsu, P. C. Chen, B. H. Liou, Albert Chin, F. S. Yeh

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We proposed two lanthanide-oxide mixed TiO₂ dielectrics for metal-insulator-metal (MIM) capacitors using TiO₂ -LaAlO (TLAO) and TiO₂ -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m² with a low leakage current of 1.4× 10^-7 A/ cm² was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO₂ dielectrics with the introduction of LaAlO₃ and LaYO might be promising for MIM capacitors.

Original language	English
Pages (from-to)	H821-H824
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	8
DOIs	https://doi.org/10.1149/1.3439668
State	Published - 2010

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@article{399d9920ca954de39d559fabf4d703aa,

title = "Lanthanide-oxides mixed TiO 2 dielectrics for high-κ MIM capacitors",

abstract = "We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.",

author = "Cheng, {C. H.} and Deng, {C. K.} and Hsu, {H. H.} and Chen, {P. C.} and Liou, {B. H.} and Albert Chin and Yeh, {F. S.}",

year = "2010",

doi = "10.1149/1.3439668",

language = "English",

volume = "157",

pages = "H821--H824",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Lanthanide-oxides mixed TiO 2 dielectrics for high-κ MIM capacitors

AU - Cheng, C. H.

AU - Deng, C. K.

AU - Hsu, H. H.

AU - Chen, P. C.

AU - Liou, B. H.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010

Y1 - 2010

N2 - We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.

AB - We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.

UR - http://www.scopus.com/inward/record.url?scp=77954718362&partnerID=8YFLogxK

U2 - 10.1149/1.3439668

DO - 10.1149/1.3439668

M3 - Article

AN - SCOPUS:77954718362

SN - 0013-4651

VL - 157

SP - H821-H824

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Lanthanide-oxides mixed TiO ₂ dielectrics for high-κ MIM capacitors

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