La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFETs and Ni germano-silicide

C. H. Huang; C. Y. Lin; H. Y. Li; W. J. Chen; Albert Chin; P. Mei

doi:10.1109/VTSA.2003.1252550

La ₂ O ₃ /Si _0.3 Ge _0.7 p-MOSFETs and Ni germano-silicide

C. H. Huang, C. Y. Lin, H. Y. Li, W. J. Chen, Albert Chin, P. Mei

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have used SlojGei.7 to improve the hole mobility of La ₂ O ₃ p-MOSFETs. A hole mobility of 55 cm ² /V-s in nitrided La ₂ O ₃ /Si _0.3 Ge _0.7 p-MOSFET is measured and 1,8 times higher than the 31 cm ² /V-s mobility in nitrided La ₂ O ₃ /Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Ω/Π and small junction leakage currents of 3×10 ^-8 A/cm ² and 2×10 ^-7 A/cm ² for respective P ⁺ N and N ⁺ P junctions.

Original language	English
Title of host publication	VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	52-55
Number of pages	4
ISBN (Electronic)	0780377656
DOIs	https://doi.org/10.1109/VTSA.2003.1252550
State	Published - 1 Jan 2003
Event	20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003 - Hsinchu, Taiwan Duration: 6 Oct 2003 → 8 Oct 2003

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume	2003-January
ISSN (Print)	1930-8868

Conference

Conference	20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003
Country/Territory	Taiwan
City	Hsinchu
Period	6/10/03 → 8/10/03

Access to Document

10.1109/VTSA.2003.1252550

Cite this

Huang, C. H., Lin, C. Y., Li, H. Y., Chen, W. J., Chin, A., & Mei, P. (2003). La ₂ O ₃ /Si _0.3 Ge _0.7 p-MOSFETs and Ni germano-silicide. In VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings (pp. 52-55). Article 1252550 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.2003.1252550

@inproceedings{874a622dec1a412d8fab474b8a9a8fb5,

title = "La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFETs and Ni germano-silicide",

abstract = " We have used SlojGei.7 to improve the hole mobility of La 2 O 3 p-MOSFETs. A hole mobility of 55 cm 2 /V-s in nitrided La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFET is measured and 1,8 times higher than the 31 cm 2 /V-s mobility in nitrided La 2 O 3 /Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Ω/Π and small junction leakage currents of 3×10 -8 A/cm 2 and 2×10 -7 A/cm 2 for respective P + N and N + P junctions. ",

author = "Huang, {C. H.} and Lin, {C. Y.} and Li, {H. Y.} and Chen, {W. J.} and Albert Chin and P. Mei",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/VTSA.2003.1252550",

language = "English",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "52--55",

booktitle = "VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings",

address = "美國",

note = "20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003 ; Conference date: 06-10-2003 Through 08-10-2003",

}

Huang, CH, Lin, CY, Li, HY, Chen, WJ, Chin, A & Mei, P 2003, La ₂ O ₃ /Si _0.3 Ge _0.7 p-MOSFETs and Ni germano-silicide. in VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings., 1252550, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 52-55, 20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003, Hsinchu, Taiwan, 6/10/03. https://doi.org/10.1109/VTSA.2003.1252550

La ₂ O ₃ /Si _0.3 Ge _0.7 p-MOSFETs and Ni germano-silicide. / Huang, C. H.; Lin, C. Y.; Li, H. Y. et al.
VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 52-55 1252550 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFETs and Ni germano-silicide

AU - Huang, C. H.

AU - Lin, C. Y.

AU - Li, H. Y.

AU - Chen, W. J.

AU - Chin, Albert

AU - Mei, P.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - We have used SlojGei.7 to improve the hole mobility of La 2 O 3 p-MOSFETs. A hole mobility of 55 cm 2 /V-s in nitrided La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFET is measured and 1,8 times higher than the 31 cm 2 /V-s mobility in nitrided La 2 O 3 /Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Ω/Π and small junction leakage currents of 3×10 -8 A/cm 2 and 2×10 -7 A/cm 2 for respective P + N and N + P junctions.

AB - We have used SlojGei.7 to improve the hole mobility of La 2 O 3 p-MOSFETs. A hole mobility of 55 cm 2 /V-s in nitrided La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFET is measured and 1,8 times higher than the 31 cm 2 /V-s mobility in nitrided La 2 O 3 /Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Ω/Π and small junction leakage currents of 3×10 -8 A/cm 2 and 2×10 -7 A/cm 2 for respective P + N and N + P junctions.

UR - http://www.scopus.com/inward/record.url?scp=84944675106&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2003.1252550

DO - 10.1109/VTSA.2003.1252550

M3 - Conference contribution

AN - SCOPUS:84944675106

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 52

EP - 55

BT - VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003

Y2 - 6 October 2003 through 8 October 2003

ER -

Huang CH, Lin CY, Li HY, Chen WJ, Chin A, Mei P. La ₂ O ₃ /Si _0.3 Ge _0.7 p-MOSFETs and Ni germano-silicide. In VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 52-55. 1252550. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2003.1252550