@inproceedings{4aca34f9faa94c25a56447a332cdd048,
title = "Ka-band pHEMT quadrupler with injection and extraction from oscillator frequency doubling points",
abstract = "A Ka-band injection-locked quadrupler MMIC is demonstrated using 0.15-μm pseudomorphic high electron mobility transistor (pHEMT) technology. pHEMT technology is suitable to the millimeter wave quadrupler by using the topology of high-order sub-harmonic injection lock based on a cross-coupled oscillator. Furthermore, thanks to the semi-insulating GaAs substrate, it is easy to implement microwave/millimeter wave passive components to achieve accurate balanced signals. As a result, the measured output power of the quadrupler is 8 dBm for frequency of 30 GHz and the locking bandwidth reaches 300 MHz.",
keywords = "GaAs, Marchand balun, Sub-harmonic, high-electron mobility transistors (HEMTs), injection-locked, voltage controlled oscillator",
author = "Chang, {Wei Ling} and Chin-Chun Meng and Syu, {Jin Siang} and Wu, {Yan Feng} and Huang, {Guo Wei}",
year = "2014",
doi = "10.1109/MWSYM.2014.6848643",
language = "English",
isbn = "9781479938698",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE MTT-S International Microwave Symposium, IMS 2014",
address = "美國",
note = "2014 IEEE MTT-S International Microwave Symposium, IMS 2014 ; Conference date: 01-06-2014 Through 06-06-2014",
}