Junctionless gate-all-around nanowire field-effect transistors with an extended gate in biomolecule detection

Chih Wei Chen; Ru Zheng Lin; Li Chuan Chiang; Fu-Ming Pan; Jeng-Tzong Sheu

doi:10.7567/1347-4065/aaf46b

Junctionless gate-all-around nanowire field-effect transistors with an extended gate in biomolecule detection

Chih Wei Chen, Ru Zheng Lin, Li Chuan Chiang, Fu-Ming Pan, Jeng-Tzong Sheu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this study, we investigated the potential drift and sensitivity in an extended-gate (EG) field-effect-transistor (FET)-based potentiometric sensor with junctionless (JL) and inversion-mode (IM) gate-all-around (GAA) nanowire (NW) FETs. An EG electrode (EGE) coated with Al₂O₃ via plasma-enhanced atomic-layer deposition exhibited high stability. Both JL and IM GAA NWFETs were prepared in the same batch and exhibited high electrical performance, including a steep subthreshold swing of approximately 63 mV dec^-1 and a high ON/OFF current ratio of approximately 3 ×10⁷ at V _DS = 0.1 V. However, JL GAA NWFETs exhibited higher drift stability than did IM GAA NWFETs under various working regions over a long period of operation. Furthermore, JL GAA NWFETs with EGEs (JL GAA NWFETs w-EGEs) exhibited the highest sensitivity when operating under the subthreshold region in pH sensing (ΔI/I ₀ = ∼4410%). The readout sensitivity reached S _out = 82%. A JL GAA NWFET w-EGE was also demonstrated as a potentiometric biosensor for streptavidin real-time detection at concentrations of 42 fM to 4.2 nM.

Original language	English
Article number	027001
Number of pages	9
Journal	Japanese journal of applied physics
Volume	58
Issue number	2
DOIs	https://doi.org/10.7567/1347-4065/aaf46b
State	Published - 1 Feb 2019

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@article{3a6ecd4bfefc4e61815bcc4715af9c73,

title = "Junctionless gate-all-around nanowire field-effect transistors with an extended gate in biomolecule detection",

abstract = "In this study, we investigated the potential drift and sensitivity in an extended-gate (EG) field-effect-transistor (FET)-based potentiometric sensor with junctionless (JL) and inversion-mode (IM) gate-all-around (GAA) nanowire (NW) FETs. An EG electrode (EGE) coated with Al2O3 via plasma-enhanced atomic-layer deposition exhibited high stability. Both JL and IM GAA NWFETs were prepared in the same batch and exhibited high electrical performance, including a steep subthreshold swing of approximately 63 mV dec-1 and a high ON/OFF current ratio of approximately 3 ×107 at V DS = 0.1 V. However, JL GAA NWFETs exhibited higher drift stability than did IM GAA NWFETs under various working regions over a long period of operation. Furthermore, JL GAA NWFETs with EGEs (JL GAA NWFETs w-EGEs) exhibited the highest sensitivity when operating under the subthreshold region in pH sensing (ΔI/I 0 = ∼4410%). The readout sensitivity reached S out = 82%. A JL GAA NWFET w-EGE was also demonstrated as a potentiometric biosensor for streptavidin real-time detection at concentrations of 42 fM to 4.2 nM.",

author = "Chen, {Chih Wei} and Lin, {Ru Zheng} and Chiang, {Li Chuan} and Fu-Ming Pan and Jeng-Tzong Sheu",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

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AU - Chen, Chih Wei

AU - Lin, Ru Zheng

AU - Chiang, Li Chuan

AU - Pan, Fu-Ming

AU - Sheu, Jeng-Tzong

PY - 2019/2/1

Y1 - 2019/2/1

N2 - In this study, we investigated the potential drift and sensitivity in an extended-gate (EG) field-effect-transistor (FET)-based potentiometric sensor with junctionless (JL) and inversion-mode (IM) gate-all-around (GAA) nanowire (NW) FETs. An EG electrode (EGE) coated with Al2O3 via plasma-enhanced atomic-layer deposition exhibited high stability. Both JL and IM GAA NWFETs were prepared in the same batch and exhibited high electrical performance, including a steep subthreshold swing of approximately 63 mV dec-1 and a high ON/OFF current ratio of approximately 3 ×107 at V DS = 0.1 V. However, JL GAA NWFETs exhibited higher drift stability than did IM GAA NWFETs under various working regions over a long period of operation. Furthermore, JL GAA NWFETs with EGEs (JL GAA NWFETs w-EGEs) exhibited the highest sensitivity when operating under the subthreshold region in pH sensing (ΔI/I 0 = ∼4410%). The readout sensitivity reached S out = 82%. A JL GAA NWFET w-EGE was also demonstrated as a potentiometric biosensor for streptavidin real-time detection at concentrations of 42 fM to 4.2 nM.

AB - In this study, we investigated the potential drift and sensitivity in an extended-gate (EG) field-effect-transistor (FET)-based potentiometric sensor with junctionless (JL) and inversion-mode (IM) gate-all-around (GAA) nanowire (NW) FETs. An EG electrode (EGE) coated with Al2O3 via plasma-enhanced atomic-layer deposition exhibited high stability. Both JL and IM GAA NWFETs were prepared in the same batch and exhibited high electrical performance, including a steep subthreshold swing of approximately 63 mV dec-1 and a high ON/OFF current ratio of approximately 3 ×107 at V DS = 0.1 V. However, JL GAA NWFETs exhibited higher drift stability than did IM GAA NWFETs under various working regions over a long period of operation. Furthermore, JL GAA NWFETs with EGEs (JL GAA NWFETs w-EGEs) exhibited the highest sensitivity when operating under the subthreshold region in pH sensing (ΔI/I 0 = ∼4410%). The readout sensitivity reached S out = 82%. A JL GAA NWFET w-EGE was also demonstrated as a potentiometric biosensor for streptavidin real-time detection at concentrations of 42 fM to 4.2 nM.

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Junctionless gate-all-around nanowire field-effect transistors with an extended gate in biomolecule detection

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