In this paper, a n-type junctionless FET (JLFET) with a p-type fin body (FB) is investigated using a 3-D numerical simulator. We show that the proposed device (FB-JLFET) with a p + FB can control the electrostatic potential of the channel more efficiently for multi- V TH (threshold voltage) and dynamic threshold (DT) operation. Moreover, body bias application is implemented in FB-JLFET and a large body factor (gamma) is predicted for wide range V TH modulation. Thanks to the stronger potential coupling between the channel and FB, the proposed device exhibits gamma improvement compared to the conventional JL bulk FinFETs under the same electrostatic control. In addition, DT operation is studied in the form of a JLFET for the first time and it exhibits 37% improvement of the on-state drive current and better subthreshold swing (S.S.) compared to FB-JLFET without DT. This paper provides the feasibility of multi- V TH operation with body bias mode for high performance or low-power applications and DT operation for high-speed circuits with low power consumption.
|Number of pages||8|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - 1 Aug 2018|
- Body bias (V )
- body doping (Na)
- dynamic threshold (DT)
- fin body (FB)