Junction and device characteristics of gate-last ge p- and n-MOSFETs with ALD-Al₂O₃ gate dielectric

Keyphrases

• NMOSFET 100%
• Gate-last 100%
• Junction Characteristics 100%
• Al2O3 Gate Dielectric 100%
• Device Characteristics 100%
• Ge pMOSFET 100%
• Forming Gas Annealing 100%
• NFET 100%
• ALD Al2O3 100%
• On-state Current 50%
• Interface States 50%
• Order of Magnitude 50%
• MOSFET 50%
• Aluminum Oxide 50%
• Dopant Activation 50%
• P-n Junction 50%
• Contact Resistance 50%
• Thermal Budget 50%
• Leakage Path 50%
• Doping Concentration 50%
• Voltage Range 50%
• Surface States 50%
• Low-cost Substrates 50%
• Bias Temperature Instability 50%
• Substrate Doping 50%
• Atomic Layer Deposited 50%
• Rectifying Ratio 50%
• Junction Diodes 50%
• Junction Area 50%
• Peripheral Regions 50%
• Reverse Leakage 50%

Material Science

• Field Effect Transistor 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Al2O3 100%
• Dielectric Material 100%
• Surface (Surface Science) 66%
• Doping (Additives) 33%
• Contact Resistance 33%

Engineering

• Field Effect Transistor 100%
• Gate Dielectric 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Interface State 33%
• Dopant Activation 33%
• Atomic Layer 33%
• Surface State 33%
• Ge Interface 33%