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Junction and device characteristics of gate-last ge p- and n-MOSFETs with ALD-Al2O3 gate dielectric
Chao Ching Cheng*, Chao-Hsin Chien, Guang Li Luo, Ching Lun Lin, Hung Sen Chen, Jun Cheng Liu, Chi Chung Kei, Chien Nan Hsiao, Chun Yen Chang
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
16
Scopus
citations