Junction and device characteristics of gate-last ge p- and n-MOSFETs with ALD-Al2O3 gate dielectric

Chao Ching Cheng*, Chao-Hsin Chien, Guang Li Luo, Ching Lun Lin, Hung Sen Chen, Jun Cheng Liu, Chi Chung Kei, Chien Nan Hsiao, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Material Science

Engineering