Abstract
Laser-ablated Ge reacts with N2 to form a new species that absorbs near 887.9 cm-1. Based on observed and calculated vibrational wave numbers and Ge- and N-isotopic shifts, the carrier of observed feature to be linear GeNNGe. Experimental observations that the N-N bond remains intact and that the concentration of linear GeNNGe became enhanced at an increased temperature of deposition and after annealing are consistent with this mechanism.
Original language | English |
---|---|
Pages (from-to) | 9710-9718 |
Number of pages | 9 |
Journal | Journal of Chemical Physics |
Volume | 118 |
Issue number | 21 |
DOIs | |
State | Published - 1 Jun 2003 |