Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition

Jyh-Cheng Chen; K. Xie; J. F. Chen; Wei-Kuo Chen; C. R. Wie; P. L. Liu

doi:10.1116/1.576323

Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition

Jyh-Cheng Chen, K. Xie, J. F. Chen, Wei-Kuo Chen, C. R. Wie, P. L. Liu

Research output: Contribution to journal › Comment/debate

2 Scopus citations

Original language	English
Pages (from-to)	3119-3120
Number of pages	2
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	7
Issue number	5
DOIs	https://doi.org/10.1116/1.576323
State	Published - Sep 1989

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title = "Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition",

author = "Jyh-Cheng Chen and K. Xie and Chen, {J. F.} and Wei-Kuo Chen and Wie, {C. R.} and Liu, {P. L.}",

year = "1989",

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language = "English",

volume = "7",

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journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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T1 - Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition

AU - Chen, Jyh-Cheng

AU - Xie, K.

AU - Chen, J. F.

AU - Chen, Wei-Kuo

AU - Wie, C. R.

AU - Liu, P. L.

PY - 1989/9

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U2 - 10.1116/1.576323

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M3 - Comment/debate

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SN - 0734-2101

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EP - 3120

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition

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