InZnSnO-based electronic devices for flat panel display applications

Po-Tsun Liu; Chur Shyang Fuh; Yang Shun Fan; S. M. Sze

doi:10.1149/2.008409jss

InZnSnO-based electronic devices for flat panel display applications

Po-Tsun Liu, Chur Shyang Fuh, Yang Shun Fan, S. M. Sze

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This work demonstrates the versatility of amorphous InZnSnO (a-IZTO) oxide semiconductor, covering from the thin film transistor (TFT) to the resistive random accessmemory (RRAM) technologies for system-on-panel applications. The high-performance a-IZTO TFTs with effective carry mobility of 39.6 cm²/V s, threshold voltage of -0.28 V and subthreshold swing of 0.25 decade/V are obtained in this study. Thermal post-annealing also was used to provide stable electrical characteristics with a few threshold voltage shift after positive gate bias stress. On the other hand, the RRAM device with a-IZTO film acting as active layer exhibits superior bipolar resistive switching characteristics. The wide (>10) resistance window and the stability endurance of hundreds cycle are achieved. Both of the proposed a-IZTO TFT and RRAM have promising potential to be integrated with a-IZTO-based periphery electronic circuits for flat-panel display applications.

Original language	English
Pages (from-to)	Q3054-Q3057
Number of pages	4
Journal	ECS Journal of Solid State Science and Technology
Volume	3
Issue number	9
DOIs	https://doi.org/10.1149/2.008409jss
State	Published - Jan 2014

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title = "InZnSnO-based electronic devices for flat panel display applications",

abstract = "This work demonstrates the versatility of amorphous InZnSnO (a-IZTO) oxide semiconductor, covering from the thin film transistor (TFT) to the resistive random accessmemory (RRAM) technologies for system-on-panel applications. The high-performance a-IZTO TFTs with effective carry mobility of 39.6 cm2/V s, threshold voltage of -0.28 V and subthreshold swing of 0.25 decade/V are obtained in this study. Thermal post-annealing also was used to provide stable electrical characteristics with a few threshold voltage shift after positive gate bias stress. On the other hand, the RRAM device with a-IZTO film acting as active layer exhibits superior bipolar resistive switching characteristics. The wide (>10) resistance window and the stability endurance of hundreds cycle are achieved. Both of the proposed a-IZTO TFT and RRAM have promising potential to be integrated with a-IZTO-based periphery electronic circuits for flat-panel display applications.",

author = "Po-Tsun Liu and Fuh, {Chur Shyang} and Fan, {Yang Shun} and Sze, {S. M.}",

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T1 - InZnSnO-based electronic devices for flat panel display applications

AU - Liu, Po-Tsun

AU - Fuh, Chur Shyang

AU - Fan, Yang Shun

AU - Sze, S. M.

PY - 2014/1

Y1 - 2014/1

N2 - This work demonstrates the versatility of amorphous InZnSnO (a-IZTO) oxide semiconductor, covering from the thin film transistor (TFT) to the resistive random accessmemory (RRAM) technologies for system-on-panel applications. The high-performance a-IZTO TFTs with effective carry mobility of 39.6 cm2/V s, threshold voltage of -0.28 V and subthreshold swing of 0.25 decade/V are obtained in this study. Thermal post-annealing also was used to provide stable electrical characteristics with a few threshold voltage shift after positive gate bias stress. On the other hand, the RRAM device with a-IZTO film acting as active layer exhibits superior bipolar resistive switching characteristics. The wide (>10) resistance window and the stability endurance of hundreds cycle are achieved. Both of the proposed a-IZTO TFT and RRAM have promising potential to be integrated with a-IZTO-based periphery electronic circuits for flat-panel display applications.

AB - This work demonstrates the versatility of amorphous InZnSnO (a-IZTO) oxide semiconductor, covering from the thin film transistor (TFT) to the resistive random accessmemory (RRAM) technologies for system-on-panel applications. The high-performance a-IZTO TFTs with effective carry mobility of 39.6 cm2/V s, threshold voltage of -0.28 V and subthreshold swing of 0.25 decade/V are obtained in this study. Thermal post-annealing also was used to provide stable electrical characteristics with a few threshold voltage shift after positive gate bias stress. On the other hand, the RRAM device with a-IZTO film acting as active layer exhibits superior bipolar resistive switching characteristics. The wide (>10) resistance window and the stability endurance of hundreds cycle are achieved. Both of the proposed a-IZTO TFT and RRAM have promising potential to be integrated with a-IZTO-based periphery electronic circuits for flat-panel display applications.

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InZnSnO-based electronic devices for flat panel display applications

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