InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors

Ram Narayan Chauhan; Nidhi Tiwari; Ya-Hsiang Tai; Po-Tsun Liu; Han Ping D. Shieh

InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors

Ram Narayan Chauhan
, Nidhi Tiwari
, Ya-Hsiang Tai
, Po-Tsun Liu
, Han Ping D. Shieh

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A thin film transistor with bi-stack layers of silicon incorporated InZnO (IZO:Si) on InZnO layer is proposed to enhance device performance and negative photo-biased stability. The resulting device realizes as enhancement mode (V_th ∼ 1.30 V) with mobility of 15.3 cm²/Vs, sub-threshold swing of 0.20 V/decade, better stab ility - 0.75V.

Original language	English
Title of host publication	22nd International Display Workshops, IDW 2015
Publisher	International Display Workshops
Pages	142-143
Number of pages	2
ISBN (Electronic)	9781510845503
State	Published - 2015
Event	22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 9 Dec 2015 → 11 Dec 2015

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	22nd International Display Workshops, IDW 2015
Country/Territory	Japan
City	Otsu
Period	9/12/15 → 11/12/15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Keywords

InZnO
Sputtering
Thin film transistors

Cite this

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title = "InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors",

abstract = "A thin film transistor with bi-stack layers of silicon incorporated InZnO (IZO:Si) on InZnO layer is proposed to enhance device performance and negative photo-biased stability. The resulting device realizes as enhancement mode (Vth ∼ 1.30 V) with mobility of 15.3 cm2/Vs, sub-threshold swing of 0.20 V/decade, better stab ility - 0.75V.",

keywords = "InZnO, Sputtering, Thin film transistors",

author = "Chauhan, \{Ram Narayan\} and Nidhi Tiwari and Ya-Hsiang Tai and Po-Tsun Liu and Shieh, \{Han Ping D.\}",

note = "Publisher Copyright: {\textcopyright} 2015 Society for Information Display.; 22nd International Display Workshops, IDW 2015 ; Conference date: 09-12-2015 Through 11-12-2015",

year = "2015",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "142--143",

booktitle = "22nd International Display Workshops, IDW 2015",

}

Chauhan, RN, Tiwari, N, Tai, Y-H , Liu, P-T & Shieh, HPD 2015, InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors. in 22nd International Display Workshops, IDW 2015. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 142-143, 22nd International Display Workshops, IDW 2015, Otsu, Japan, 9/12/15.

InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors. / Chauhan, Ram Narayan; Tiwari, Nidhi; Tai, Ya-Hsiang et al.
22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. p. 142-143 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors

AU - Chauhan, Ram Narayan

AU - Tiwari, Nidhi

AU - Tai, Ya-Hsiang

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D.

PY - 2015

Y1 - 2015

N2 - A thin film transistor with bi-stack layers of silicon incorporated InZnO (IZO:Si) on InZnO layer is proposed to enhance device performance and negative photo-biased stability. The resulting device realizes as enhancement mode (Vth ∼ 1.30 V) with mobility of 15.3 cm2/Vs, sub-threshold swing of 0.20 V/decade, better stab ility - 0.75V.

AB - A thin film transistor with bi-stack layers of silicon incorporated InZnO (IZO:Si) on InZnO layer is proposed to enhance device performance and negative photo-biased stability. The resulting device realizes as enhancement mode (Vth ∼ 1.30 V) with mobility of 15.3 cm2/Vs, sub-threshold swing of 0.20 V/decade, better stab ility - 0.75V.

KW - InZnO

KW - Sputtering

KW - Thin film transistors

UR - https://www.scopus.com/pages/publications/85056390701

M3 - Conference contribution

AN - SCOPUS:85056390701

T3 - Proceedings of the International Display Workshops

SP - 142

EP - 143

BT - 22nd International Display Workshops, IDW 2015

PB - International Display Workshops

T2 - 22nd International Display Workshops, IDW 2015

Y2 - 9 December 2015 through 11 December 2015

ER -

InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors

Abstract

Publication series

Conference

UN SDGs

Keywords

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