(INVITED) SILICIDE CONTACT FOR SHALLOW JUNCTION DEVICES.

King-Ning Tu

doi:10.7567/JJAPS.22S1.147

(INVITED) SILICIDE CONTACT FOR SHALLOW JUNCTION DEVICES.

King-Ning Tu^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Silicide contacts which have a contact depth about 10 nm will be needed in VLSI shallow junction devices. The use of Si alloys and refractory metal alloys to produce shallow silicide contacts on Si is briefly reviewed with an emphasis on their inter facial reaction and Schottky behavior. The effect of contact reaction on dopant redistribution is discussed.

Original language	English
Pages (from-to)	147-151
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	22
DOIs	https://doi.org/10.7567/JJAPS.22S1.147
State	Published - 1 Jan 1983

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10.7567/JJAPS.22S1.147

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@article{0e59c5b2146a4a81a5b9a744f153f397,

title = "(INVITED) SILICIDE CONTACT FOR SHALLOW JUNCTION DEVICES.",

abstract = "Silicide contacts which have a contact depth about 10 nm will be needed in VLSI shallow junction devices. The use of Si alloys and refractory metal alloys to produce shallow silicide contacts on Si is briefly reviewed with an emphasis on their inter facial reaction and Schottky behavior. The effect of contact reaction on dopant redistribution is discussed.",

author = "King-Ning Tu",

year = "1983",

month = jan,

day = "1",

doi = "10.7567/JJAPS.22S1.147",

language = "English",

volume = "22",

pages = "147--151",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - (INVITED) SILICIDE CONTACT FOR SHALLOW JUNCTION DEVICES.

AU - Tu, King-Ning

PY - 1983/1/1

Y1 - 1983/1/1

N2 - Silicide contacts which have a contact depth about 10 nm will be needed in VLSI shallow junction devices. The use of Si alloys and refractory metal alloys to produce shallow silicide contacts on Si is briefly reviewed with an emphasis on their inter facial reaction and Schottky behavior. The effect of contact reaction on dopant redistribution is discussed.

AB - Silicide contacts which have a contact depth about 10 nm will be needed in VLSI shallow junction devices. The use of Si alloys and refractory metal alloys to produce shallow silicide contacts on Si is briefly reviewed with an emphasis on their inter facial reaction and Schottky behavior. The effect of contact reaction on dopant redistribution is discussed.

UR - http://www.scopus.com/inward/record.url?scp=84957155777&partnerID=8YFLogxK

U2 - 10.7567/JJAPS.22S1.147

DO - 10.7567/JJAPS.22S1.147

M3 - Article

AN - SCOPUS:0020553526

SN - 0021-4922

VL - 22

SP - 147

EP - 151

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -

(INVITED) SILICIDE CONTACT FOR SHALLOW JUNCTION DEVICES.

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