Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

Fu He Hsiao; Tzu Yi Lee; Wen Chien Miao; Yi Hua Pai; Daisuke Iida; Chun-Liang Lin; Fang-Chung Chen; Chi Wai Chow; Chien-Chung Lin; Ray Hua Horng; Jr Hau He; Kazuhiro Ohkawa; Yu Heng Hong; Chiao Yun Chang; Hao Chung Kuo

doi:10.1186/s11671-023-03871-z

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

Fu He Hsiao, Tzu Yi Lee, Wen Chien Miao, Yi Hua Pai, Daisuke Iida, Chun-Liang Lin, Fang-Chung Chen, Chi Wai Chow, Chien-Chung Lin, Ray Hua Horng, Jr Hau He, Kazuhiro Ohkawa, Yu Heng Hong^*, Chiao Yun Chang^*, Hao Chung Kuo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm². These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

Original language	English
Article number	95
Journal	Discover Nano
Volume	18
Issue number	1
DOIs	https://doi.org/10.1186/s11671-023-03871-z
State	Published - Dec 2023

Keywords

Micro-LED
Red InGaN-based LED
Visible light communication

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Hsiao, F. H., Lee, T. Y., Miao, W. C., Pai, Y. H., Iida, D., Lin, C-L., Chen, F-C., Chow, C. W., Lin, C-C., Horng, R. H., He, J. H., Ohkawa, K., Hong, Y. H., Chang, C. Y., & Kuo, H. C. (2023). Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications. Discover Nano, 18(1), Article 95. https://doi.org/10.1186/s11671-023-03871-z

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title = "Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications",

abstract = "In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.",

keywords = "Micro-LED, Red InGaN-based LED, Visible light communication",

author = "Hsiao, {Fu He} and Lee, {Tzu Yi} and Miao, {Wen Chien} and Pai, {Yi Hua} and Daisuke Iida and Chun-Liang Lin and Fang-Chung Chen and Chow, {Chi Wai} and Chien-Chung Lin and Horng, {Ray Hua} and He, {Jr Hau} and Kazuhiro Ohkawa and Hong, {Yu Heng} and Chang, {Chiao Yun} and Kuo, {Hao Chung}",

note = "Publisher Copyright: {\textcopyright} 2023, The Author(s).",

year = "2023",

month = dec,

doi = "10.1186/s11671-023-03871-z",

language = "English",

volume = "18",

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AU - Hsiao, Fu He

AU - Lee, Tzu Yi

AU - Miao, Wen Chien

AU - Pai, Yi Hua

AU - Iida, Daisuke

AU - Lin, Chun-Liang

AU - Chen, Fang-Chung

AU - Chow, Chi Wai

AU - Lin, Chien-Chung

AU - Horng, Ray Hua

AU - He, Jr Hau

AU - Ohkawa, Kazuhiro

AU - Hong, Yu Heng

AU - Chang, Chiao Yun

AU - Kuo, Hao Chung

PY - 2023/12

Y1 - 2023/12

N2 - In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

AB - In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

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JO - Discover Nano

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Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

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