Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

Fu He Hsiao; Tzu Yi Lee; Wen Chien Miao; Yi Hua Pai; Daisuke Iida; Chun Liang Lin; Fang Chung Chen; Chi Wai Chow; Chien-Chung Lin; Ray Hua Horng; Jr Hau He; Kazuhiro Ohkawa; Yu Heng Hong; Chiao Yun Chang; Hao Chung Kuo

doi:10.1186/s11671-023-03871-z

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

Fu He Hsiao, Tzu Yi Lee, Wen Chien Miao, Yi Hua Pai, Daisuke Iida, Chun Liang Lin, Fang Chung Chen, Chi Wai Chow, Chien-Chung Lin, Ray Hua Horng, Jr Hau He, Kazuhiro Ohkawa, Yu Heng Hong^*, Chiao Yun Chang^*, Hao Chung Kuo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm². These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

Original language	English
Article number	95
Journal	Discover Nano
Volume	18
Issue number	1
DOIs	https://doi.org/10.1186/s11671-023-03871-z
State	Published - Dec 2023

Keywords

Micro-LED
Red InGaN-based LED
Visible light communication

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Hsiao, F. H., Lee, T. Y., Miao, W. C., Pai, Y. H., Iida, D., Lin, C. L., Chen, F. C., Chow, C. W., Lin, C.-C., Horng, R. H., He, J. H., Ohkawa, K., Hong, Y. H., Chang, C. Y., & Kuo, H. C. (2023). Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications. Discover Nano, 18(1), Article 95. https://doi.org/10.1186/s11671-023-03871-z

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title = "Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications",

abstract = "In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.",

keywords = "Micro-LED, Red InGaN-based LED, Visible light communication",

author = "Hsiao, {Fu He} and Lee, {Tzu Yi} and Miao, {Wen Chien} and Pai, {Yi Hua} and Daisuke Iida and Lin, {Chun Liang} and Chen, {Fang Chung} and Chow, {Chi Wai} and Chien-Chung Lin and Horng, {Ray Hua} and He, {Jr Hau} and Kazuhiro Ohkawa and Hong, {Yu Heng} and Chang, {Chiao Yun} and Kuo, {Hao Chung}",

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year = "2023",

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doi = "10.1186/s11671-023-03871-z",

language = "English",

volume = "18",

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AU - Hsiao, Fu He

AU - Lee, Tzu Yi

AU - Miao, Wen Chien

AU - Pai, Yi Hua

AU - Iida, Daisuke

AU - Lin, Chun Liang

AU - Chen, Fang Chung

AU - Chow, Chi Wai

AU - Lin, Chien-Chung

AU - Horng, Ray Hua

AU - He, Jr Hau

AU - Ohkawa, Kazuhiro

AU - Hong, Yu Heng

AU - Chang, Chiao Yun

AU - Kuo, Hao Chung

PY - 2023/12

Y1 - 2023/12

N2 - In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

AB - In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

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JO - Discover Nano

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Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

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