Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures

Engineering & Materials Science

• Metallorganic chemical vapor deposition 100%
• Buffer layers 90%
• Sapphire 84%
• Growth temperature 51%
• Nitridation 49%
• Substrates 44%
• Temperature 25%
• High electron mobility transistors 18%
• Surface morphology 17%
• Leakage currents 17%
• Ammonia 16%
• Crystalline materials 16%
• Materials properties 13%

Physics & Astronomy

• metalorganic chemical vapor deposition 60%
• sapphire 53%
• buffers 53%
• polarity 29%
• temperature 18%
• screws 11%
• high electron mobility transistors 10%
• ammonia 10%
• leakage 8%
• occurrences 8%
• electrical resistivity 6%

Chemical Compounds

• Buffer Solution 41%
• Leakage Current 13%
• Electron Mobility 12%
• Liquid Film 10%
• Polarity 8%
• Ammonia 8%
• Surface 6%