The RF properties of bulk dynamic threshold-voltage MOSFET (B-DTMOS) with a deep n-well isolation was investigated both under the normal DTMOS mode and two newly-proposed DTMOS operation modes: moderate (0.6V < Vgs=Vbs <0.85V) and over-drive (Vgs=Vbs > 0.85V) modes. While Ft can be improved to 65GHz at 12.5mA with 1.5V Vds bias under normal-mode DTMOS operation, a high Ft of 220GHz with good linearity and stability is achieved under over-drive mode of operation.
|Number of pages||2|
|State||Published - 2001|
|Event||2001 VLSI Technology Symposium - Kyoto, Japan|
Duration: 12 Jun 2001 → 14 Jun 2001
|Conference||2001 VLSI Technology Symposium|
|Period||12/06/01 → 14/06/01|