Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology

Shih Hung Chen; Ming-Dou Ker

doi:10.1016/j.microrel.2005.07.012

Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology

Shih Hung Chen, Ming-Dou Ker

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The distance between active region and the seal-ring location has been investigated in a 0.25-μm CMOS process. From the experimental results, this distance can be shrunk to only 5 μm without increasing leakage current and decreasing ESD robustness of the ESD protection devices after reliability tests of High-Accelerated Stress Test (HAST) and Temperature Cycling Test (TCT).

Original language	English
Pages (from-to)	1311-1316
Number of pages	6
Journal	Microelectronics Reliability
Volume	45
Issue number	9-11
DOIs	https://doi.org/10.1016/j.microrel.2005.07.012
State	Published - 1 Sep 2005

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10.1016/j.microrel.2005.07.012

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title = "Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology",

abstract = "The distance between active region and the seal-ring location has been investigated in a 0.25-μm CMOS process. From the experimental results, this distance can be shrunk to only 5 μm without increasing leakage current and decreasing ESD robustness of the ESD protection devices after reliability tests of High-Accelerated Stress Test (HAST) and Temperature Cycling Test (TCT).",

author = "Chen, {Shih Hung} and Ming-Dou Ker",

year = "2005",

month = sep,

day = "1",

doi = "10.1016/j.microrel.2005.07.012",

language = "English",

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AU - Ker, Ming-Dou

PY - 2005/9/1

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N2 - The distance between active region and the seal-ring location has been investigated in a 0.25-μm CMOS process. From the experimental results, this distance can be shrunk to only 5 μm without increasing leakage current and decreasing ESD robustness of the ESD protection devices after reliability tests of High-Accelerated Stress Test (HAST) and Temperature Cycling Test (TCT).

AB - The distance between active region and the seal-ring location has been investigated in a 0.25-μm CMOS process. From the experimental results, this distance can be shrunk to only 5 μm without increasing leakage current and decreasing ESD robustness of the ESD protection devices after reliability tests of High-Accelerated Stress Test (HAST) and Temperature Cycling Test (TCT).

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U2 - 10.1016/j.microrel.2005.07.012

DO - 10.1016/j.microrel.2005.07.012

M3 - Article

AN - SCOPUS:24144453567

SN - 0026-2714

VL - 45

SP - 1311

EP - 1316

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 9-11

ER -

Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology

Abstract

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