TY - GEN
T1 - Investigation on safe operating area and ESD robustness in a 60-V BCD process with different deep P-Well test structures
AU - Dai, Chia Tsen
AU - Ker, Ming-Dou
PY - 2013/8/9
Y1 - 2013/8/9
N2 - Safe operating area (SOA) is one of the noticeable reliability concerns for power MOSFETs during the normal circuit operating conditions. Besides, electrostatic discharge (ESD) reliability is another important reliability issue for the power IC products. To save the silicon area of power IC with high-voltage (HV) devices, it is preferable for HV MOSFET to be self-protected without any additional ESD protection device, and to behave wide SOA region. In this work, the impact of deep P-Well (DPW) structure to the electrical SOA (eSOA) and ESD robustness of HV MOSFET has been investigated in a 0.25-μm 60-V BCD process. DPW structure is used to implement the RESURF (reduced surface field) in MOSFET, which make it be able to sustain the high operating voltage. From the experimental results in silicon chip, the ESD robustness and eSOA of HV MOSFET can be improved by the modified DPW structure.
AB - Safe operating area (SOA) is one of the noticeable reliability concerns for power MOSFETs during the normal circuit operating conditions. Besides, electrostatic discharge (ESD) reliability is another important reliability issue for the power IC products. To save the silicon area of power IC with high-voltage (HV) devices, it is preferable for HV MOSFET to be self-protected without any additional ESD protection device, and to behave wide SOA region. In this work, the impact of deep P-Well (DPW) structure to the electrical SOA (eSOA) and ESD robustness of HV MOSFET has been investigated in a 0.25-μm 60-V BCD process. DPW structure is used to implement the RESURF (reduced surface field) in MOSFET, which make it be able to sustain the high operating voltage. From the experimental results in silicon chip, the ESD robustness and eSOA of HV MOSFET can be improved by the modified DPW structure.
UR - http://www.scopus.com/inward/record.url?scp=84881112218&partnerID=8YFLogxK
U2 - 10.1109/ICMTS.2013.6528158
DO - 10.1109/ICMTS.2013.6528158
M3 - Conference contribution
AN - SCOPUS:84881112218
SN - 9781467348485
T3 - IEEE International Conference on Microelectronic Test Structures
SP - 127
EP - 130
BT - 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings
T2 - 2013 International Conference on Microelectronic Test Structures, ICMTS 2013
Y2 - 25 March 2013 through 28 March 2013
ER -