Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse

Chao Yang Ke; Ming Dou Ker

doi:10.1109/WiPDA58524.2023.10382191

Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse

Chao Yang Ke^*, Ming Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The ESD robustness of 20-V GGNMOS and GDPMOS fabricated by the 4H-SiC process was investigated by the 100-ns transmission-line-pulse (TLP) pulse. The experimental results show that, under the test of breakdown mode, there is no correlation between the ESD robustness and the number of fingers. However, under the test of forward mode, the ESD robustness can be enhanced effectively by increasing the number of fingers. When the ESD current is conducted in the forward mode through the body diode of GGNMOS or GDPMOS, the ESD robustness can be effectively enhanced. Hence, the concept and schematic diagram of the whole-chip ESD protection are proposed to achieve sufficient ESD robustness of SiC ICs. Furthermore, the power-rail ESD clamp is an indispensable element to achieve sufficient ESD robustness.

Original language	English
Title of host publication	2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350337136
DOIs	https://doi.org/10.1109/WiPDA58524.2023.10382191
State	Published - 2023
Event	10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 - Charlotte, United States Duration: 4 Dec 2023 → 6 Dec 2023

Publication series

Name	2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023

Conference

Conference	10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
Country/Territory	United States
City	Charlotte
Period	4/12/23 → 6/12/23

Keywords

body diode
ESD
GDPMOS
GGNMOS
SiC
TLP

Access to Document

10.1109/WiPDA58524.2023.10382191

Cite this

Ke, C. Y., & Ker, M. D. (2023). Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse. In 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 (2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA58524.2023.10382191

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title = "Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse",

abstract = "The ESD robustness of 20-V GGNMOS and GDPMOS fabricated by the 4H-SiC process was investigated by the 100-ns transmission-line-pulse (TLP) pulse. The experimental results show that, under the test of breakdown mode, there is no correlation between the ESD robustness and the number of fingers. However, under the test of forward mode, the ESD robustness can be enhanced effectively by increasing the number of fingers. When the ESD current is conducted in the forward mode through the body diode of GGNMOS or GDPMOS, the ESD robustness can be effectively enhanced. Hence, the concept and schematic diagram of the whole-chip ESD protection are proposed to achieve sufficient ESD robustness of SiC ICs. Furthermore, the power-rail ESD clamp is an indispensable element to achieve sufficient ESD robustness.",

keywords = "body diode, ESD, GDPMOS, GGNMOS, SiC, TLP",

author = "Ke, {Chao Yang} and Ker, {Ming Dou}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 ; Conference date: 04-12-2023 Through 06-12-2023",

year = "2023",

doi = "10.1109/WiPDA58524.2023.10382191",

language = "English",

series = "2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023",

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}

Ke, CY & Ker, MD 2023, Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse. in 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023. 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023, Charlotte, United States, 4/12/23. https://doi.org/10.1109/WiPDA58524.2023.10382191

Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse. / Ke, Chao Yang; Ker, Ming Dou.
2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse

AU - Ke, Chao Yang

AU - Ker, Ming Dou

PY - 2023

Y1 - 2023

N2 - The ESD robustness of 20-V GGNMOS and GDPMOS fabricated by the 4H-SiC process was investigated by the 100-ns transmission-line-pulse (TLP) pulse. The experimental results show that, under the test of breakdown mode, there is no correlation between the ESD robustness and the number of fingers. However, under the test of forward mode, the ESD robustness can be enhanced effectively by increasing the number of fingers. When the ESD current is conducted in the forward mode through the body diode of GGNMOS or GDPMOS, the ESD robustness can be effectively enhanced. Hence, the concept and schematic diagram of the whole-chip ESD protection are proposed to achieve sufficient ESD robustness of SiC ICs. Furthermore, the power-rail ESD clamp is an indispensable element to achieve sufficient ESD robustness.

AB - The ESD robustness of 20-V GGNMOS and GDPMOS fabricated by the 4H-SiC process was investigated by the 100-ns transmission-line-pulse (TLP) pulse. The experimental results show that, under the test of breakdown mode, there is no correlation between the ESD robustness and the number of fingers. However, under the test of forward mode, the ESD robustness can be enhanced effectively by increasing the number of fingers. When the ESD current is conducted in the forward mode through the body diode of GGNMOS or GDPMOS, the ESD robustness can be effectively enhanced. Hence, the concept and schematic diagram of the whole-chip ESD protection are proposed to achieve sufficient ESD robustness of SiC ICs. Furthermore, the power-rail ESD clamp is an indispensable element to achieve sufficient ESD robustness.

KW - body diode

KW - ESD

KW - GDPMOS

KW - GGNMOS

KW - SiC

KW - TLP

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M3 - Conference contribution

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T3 - 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023

BT - 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023

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Ke CY, Ker MD. Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse. In 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023). doi: 10.1109/WiPDA58524.2023.10382191

Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse

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Keywords

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