Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

Chao Yang Ke, Wei Cheng Wang, Ming Dou Ker, Chih Yi Yang, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.

Original languageEnglish
Title of host publication2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350334166
DOIs
StatePublished - 2023
Event2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
Duration: 17 Apr 202320 Apr 2023

Publication series

Name2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Country/TerritoryTaiwan
CityHsinchu
Period17/04/2320/04/23

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