Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

Chao Yang Ke; Wei Cheng Wang; Ming Dou Ker; Chih Yi Yang; Edward Yi Chang

doi:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

Chao Yang Ke, Wei Cheng Wang, Ming Dou Ker, Chih Yi Yang, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.

Original language	English
Title of host publication	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350334166
DOIs	https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426
State	Published - 2023
Event	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan Duration: 17 Apr 2023 → 20 Apr 2023

Publication series

Name	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Country/Territory	Taiwan
City	Hsinchu
Period	17/04/23 → 20/04/23

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10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

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Ke, C. Y., Wang, W. C., Ker, M. D., Yang, C. Y., & Chang, E. Y. (2023). Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

Ke, Chao Yang ; Wang, Wei Cheng ; Ker, Ming Dou et al. / Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

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title = "Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement",

abstract = "The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.",

author = "Ke, {Chao Yang} and Wang, {Wei Cheng} and Ker, {Ming Dou} and Yang, {Chih Yi} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",

year = "2023",

doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426",

language = "English",

series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Ke, CY, Wang, WC, Ker, MD, Yang, CY & Chang, EY 2023, Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. in 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023, Hsinchu, Taiwan, 17/04/23. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. / Ke, Chao Yang; Wang, Wei Cheng; Ker, Ming Dou et al.
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

AU - Ke, Chao Yang

AU - Wang, Wei Cheng

AU - Ker, Ming Dou

AU - Yang, Chih Yi

AU - Chang, Edward Yi

PY - 2023

Y1 - 2023

N2 - The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.

AB - The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.

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M3 - Conference contribution

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T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023

Y2 - 17 April 2023 through 20 April 2023

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Ke CY, Wang WC, Ker MD, Yang CY, Chang EY. Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

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