Investigation of Two Bits with Multistate Antifuse on nMOS Poly-Silicon Junctionless GAA OTP

Chen Feng Chang, Chiuan Huei Shen, Dong Ru Hsieh, Zong Han Lu, Cheng Chen Lin, Tien Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

One-time programmable (OTP) memory is essential to the security and gaming industries because of its 'write once, read many' capability. This device supports N-metal-oxide-semiconductor polycrystalline-silicon junctionless gate-all-around (GAA) nanowire transistor technology and can perform multistate antifuse. It is capable of functioning in four states instead of in the standard two states (open/short). Furthermore, the states can be read as fully open (0, 0), drain-gate breakdown (0, 1), source-gate breakdown (1, 0), and full breakdown (1, 1) states. The antifuse is formed from the oxide breakdown between the gate and the source or drain (S/D). Moreover, because multiple samples have been successfully produced, its information can be displayed as a chart or table to instantly convey information about the current device's state to programmers by reading the S/D current.

Original languageEnglish
Pages (from-to)6118-6123
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume68
Issue number12
DOIs
StatePublished - 1 Dec 2021

Keywords

  • 3-D IC
  • antifuse
  • gate-all-around (GAA)
  • junctionless transistor
  • multistate
  • nMOS
  • nanowire
  • one-time programmable (OTP) memory
  • poly-si

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