Abstract
One-time programmable (OTP) memory is essential to the security and gaming industries because of its 'write once, read many' capability. This device supports N-metal-oxide-semiconductor polycrystalline-silicon junctionless gate-all-around (GAA) nanowire transistor technology and can perform multistate antifuse. It is capable of functioning in four states instead of in the standard two states (open/short). Furthermore, the states can be read as fully open (0, 0), drain-gate breakdown (0, 1), source-gate breakdown (1, 0), and full breakdown (1, 1) states. The antifuse is formed from the oxide breakdown between the gate and the source or drain (S/D). Moreover, because multiple samples have been successfully produced, its information can be displayed as a chart or table to instantly convey information about the current device's state to programmers by reading the S/D current.
Original language | English |
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Pages (from-to) | 6118-6123 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 68 |
Issue number | 12 |
DOIs | |
State | Published - 1 Dec 2021 |
Keywords
- 3-D IC
- antifuse
- gate-all-around (GAA)
- junctionless transistor
- multistate
- nanowire
- nMOS
- one-time programmable (OTP) memory
- poly-si