Investigation of traps at MoS2/Al2O3 interface in nMOSFETs by low-frequency noise

Hui Wen Yuan; Hui Shen; Jun Jie Li; Jinhai Shao; Daming Huang; Yi Fang Chen; P. F. Wang; S. J. Ding; W. J. Liu; Albert Chin; Ming Fu Li

doi:10.1109/LED.2016.2536100

Investigation of traps at MoS₂/Al₂O₃ interface in nMOSFETs by low-frequency noise

Hui Wen Yuan, Hui Shen, Jun Jie Li, Jinhai Shao, Daming Huang, Yi Fang Chen, P. F. Wang, S. J. Ding, W. J. Liu, Albert Chin, Ming Fu Li

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A new method is proposed to distinguish the contributions of the low-frequency noise (LFN) from the channel and the source/drain Schottky contacts in MOS devices. The method is applied to back-gated nMOSFETs with MoS₂ channel and Al₂O₃ gate dielectric. To avoid a possible noise signal contamination from the top MoS₂ surface by oxygen or water molecules absorption, the nMOSFETs with multilayer MoS₂ are fabricated, and the measurements are carried out in the vacuum. The trap density Not at the MoS₂/Al₂O₃ interface is derived for the first time using the proposed method. It is found that the Not responsible to LFN depends strongly on the surface potential, ranging from 4 × 10¹⁰ cm^-2 in the weak over-drive region to 5 × 10¹¹ cm^-2 in the strong over-drive region.

Original language	English
Article number	7421989
Pages (from-to)	516-518
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	37
Issue number	4
DOIs	https://doi.org/10.1109/LED.2016.2536100
State	Published - Apr 2016

Keywords

AlO border traps
MOSFET
MoS
Noise

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10.1109/LED.2016.2536100

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title = "Investigation of traps at MoS2/Al2O3 interface in nMOSFETs by low-frequency noise",

abstract = "A new method is proposed to distinguish the contributions of the low-frequency noise (LFN) from the channel and the source/drain Schottky contacts in MOS devices. The method is applied to back-gated nMOSFETs with MoS2 channel and Al2O3 gate dielectric. To avoid a possible noise signal contamination from the top MoS2 surface by oxygen or water molecules absorption, the nMOSFETs with multilayer MoS2 are fabricated, and the measurements are carried out in the vacuum. The trap density Not at the MoS2/Al2O3 interface is derived for the first time using the proposed method. It is found that the Not responsible to LFN depends strongly on the surface potential, ranging from 4 × 1010 cm-2 in the weak over-drive region to 5 × 1011 cm-2 in the strong over-drive region.",

keywords = "AlO border traps, MOSFET, MoS, Noise",

author = "Yuan, {Hui Wen} and Hui Shen and Li, {Jun Jie} and Jinhai Shao and Daming Huang and Chen, {Yi Fang} and Wang, {P. F.} and Ding, {S. J.} and Liu, {W. J.} and Albert Chin and Li, {Ming Fu}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = apr,

doi = "10.1109/LED.2016.2536100",

language = "English",

volume = "37",

pages = "516--518",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Investigation of traps at MoS2/Al2O3 interface in nMOSFETs by low-frequency noise

AU - Yuan, Hui Wen

AU - Shen, Hui

AU - Li, Jun Jie

AU - Shao, Jinhai

AU - Huang, Daming

AU - Chen, Yi Fang

AU - Wang, P. F.

AU - Ding, S. J.

AU - Liu, W. J.

AU - Chin, Albert

AU - Li, Ming Fu

PY - 2016/4

Y1 - 2016/4

N2 - A new method is proposed to distinguish the contributions of the low-frequency noise (LFN) from the channel and the source/drain Schottky contacts in MOS devices. The method is applied to back-gated nMOSFETs with MoS2 channel and Al2O3 gate dielectric. To avoid a possible noise signal contamination from the top MoS2 surface by oxygen or water molecules absorption, the nMOSFETs with multilayer MoS2 are fabricated, and the measurements are carried out in the vacuum. The trap density Not at the MoS2/Al2O3 interface is derived for the first time using the proposed method. It is found that the Not responsible to LFN depends strongly on the surface potential, ranging from 4 × 1010 cm-2 in the weak over-drive region to 5 × 1011 cm-2 in the strong over-drive region.

AB - A new method is proposed to distinguish the contributions of the low-frequency noise (LFN) from the channel and the source/drain Schottky contacts in MOS devices. The method is applied to back-gated nMOSFETs with MoS2 channel and Al2O3 gate dielectric. To avoid a possible noise signal contamination from the top MoS2 surface by oxygen or water molecules absorption, the nMOSFETs with multilayer MoS2 are fabricated, and the measurements are carried out in the vacuum. The trap density Not at the MoS2/Al2O3 interface is derived for the first time using the proposed method. It is found that the Not responsible to LFN depends strongly on the surface potential, ranging from 4 × 1010 cm-2 in the weak over-drive region to 5 × 1011 cm-2 in the strong over-drive region.

KW - AlO border traps

KW - MOSFET

KW - MoS

KW - Noise

UR - http://www.scopus.com/inward/record.url?scp=84963851474&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2536100

DO - 10.1109/LED.2016.2536100

M3 - Article

AN - SCOPUS:84963851474

SN - 0741-3106

VL - 37

SP - 516

EP - 518

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 4

M1 - 7421989

ER -

Investigation of traps at MoS₂/Al₂O₃ interface in nMOSFETs by low-frequency noise

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