Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs

Shen Yang Lee; Han Wei Chen; Chun Chih Chung; Chiuan Huei Shen; Po Yi Kuo; Yu En Huang; Hsin Yu Chen; Tien Sheng Chao

doi:10.1109/VLSI-TSA48913.2020.9203642

Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs

Shen Yang Lee^*, Han Wei Chen, Chun Chih Chung, Chiuan Huei Shen, Po Yi Kuo, Yu En Huang, Hsin Yu Chen, Tien Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This work reports a comprehensive investigation on the negative-capacitance (NC) related ferroelectric FET (FE-FET) with Hf1-x Zrx O2 (HZO) with different sweeping sequences. Devices of the planar capacitor and Gate-All-Around (GAA) with 5.3 × 9 nm2 poly-Silicon nanowire (NW) channel were compared in detail. Despite the fact that PMA of 700°C exhibits the best ferroelectricity for the MFM capacitor, the results of NW FE-FETs are quite different owing to the stress-sensitive crystallization of HZO. We found the ZrO2, seedlayer, can significantly improve the crystallinity of HZO even with PMA-free. An internal-metal-gate (IMG) and/or 2-layer-stacked channel for GAA were demonstrated to improve performance. The inserted TiN as the IMG is found to gain superior S.S.avg of 43.85 mV/decade with 104 of ID. The Ion of GAA can be further boosted by the stacked channel. In addition, the dipole polarization of FE is used to explain the results of examining different sweeping sequences.

Original language	English
Title of host publication	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	124-125
Number of pages	2
ISBN (Electronic)	9781728142326
DOIs	https://doi.org/10.1109/VLSI-TSA48913.2020.9203642
State	Published - Aug 2020
Event	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan Duration: 10 Aug 2020 → 13 Aug 2020

Publication series

Name	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Country/Territory	Taiwan
City	Hsinchu
Period	10/08/20 → 13/08/20

Access to Document

10.1109/VLSI-TSA48913.2020.9203642

Cite this

Lee, S. Y., Chen, H. W., Chung, C. C., Shen, C. H., Kuo, P. Y., Huang, Y. E., Chen, H. Y., & Chao, T. S. (2020). Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 (pp. 124-125). Article 9203642 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA48913.2020.9203642

Lee, Shen Yang ; Chen, Han Wei ; Chung, Chun Chih et al. / Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs. 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 124-125 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

@inproceedings{a6ae6886b95741d0a4d918099d283fbe,

title = "Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs",

abstract = "This work reports a comprehensive investigation on the negative-capacitance (NC) related ferroelectric FET (FE-FET) with Hf1-x Zrx O2 (HZO) with different sweeping sequences. Devices of the planar capacitor and Gate-All-Around (GAA) with 5.3 × 9 nm2 poly-Silicon nanowire (NW) channel were compared in detail. Despite the fact that PMA of 700°C exhibits the best ferroelectricity for the MFM capacitor, the results of NW FE-FETs are quite different owing to the stress-sensitive crystallization of HZO. We found the ZrO2, seedlayer, can significantly improve the crystallinity of HZO even with PMA-free. An internal-metal-gate (IMG) and/or 2-layer-stacked channel for GAA were demonstrated to improve performance. The inserted TiN as the IMG is found to gain superior S.S.avg of 43.85 mV/decade with 104 of ID. The Ion of GAA can be further boosted by the stacked channel. In addition, the dipole polarization of FE is used to explain the results of examining different sweeping sequences.",

author = "Lee, {Shen Yang} and Chen, {Han Wei} and Chung, {Chun Chih} and Shen, {Chiuan Huei} and Kuo, {Po Yi} and Huang, {Yu En} and Chen, {Hsin Yu} and Chao, {Tien Sheng}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 ; Conference date: 10-08-2020 Through 13-08-2020",

year = "2020",

month = aug,

doi = "10.1109/VLSI-TSA48913.2020.9203642",

language = "English",

series = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "124--125",

booktitle = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

address = "美國",

}

Lee, SY, Chen, HW, Chung, CC, Shen, CH, Kuo, PY, Huang, YE, Chen, HY & Chao, TS 2020, Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs. in 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020., 9203642, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Institute of Electrical and Electronics Engineers Inc., pp. 124-125, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Hsinchu, Taiwan, 10/08/20. https://doi.org/10.1109/VLSI-TSA48913.2020.9203642

Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs. / Lee, Shen Yang; Chen, Han Wei; Chung, Chun Chih et al.
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 124-125 9203642 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs

AU - Lee, Shen Yang

AU - Chen, Han Wei

AU - Chung, Chun Chih

AU - Shen, Chiuan Huei

AU - Kuo, Po Yi

AU - Huang, Yu En

AU - Chen, Hsin Yu

AU - Chao, Tien Sheng

PY - 2020/8

Y1 - 2020/8

N2 - This work reports a comprehensive investigation on the negative-capacitance (NC) related ferroelectric FET (FE-FET) with Hf1-x Zrx O2 (HZO) with different sweeping sequences. Devices of the planar capacitor and Gate-All-Around (GAA) with 5.3 × 9 nm2 poly-Silicon nanowire (NW) channel were compared in detail. Despite the fact that PMA of 700°C exhibits the best ferroelectricity for the MFM capacitor, the results of NW FE-FETs are quite different owing to the stress-sensitive crystallization of HZO. We found the ZrO2, seedlayer, can significantly improve the crystallinity of HZO even with PMA-free. An internal-metal-gate (IMG) and/or 2-layer-stacked channel for GAA were demonstrated to improve performance. The inserted TiN as the IMG is found to gain superior S.S.avg of 43.85 mV/decade with 104 of ID. The Ion of GAA can be further boosted by the stacked channel. In addition, the dipole polarization of FE is used to explain the results of examining different sweeping sequences.

AB - This work reports a comprehensive investigation on the negative-capacitance (NC) related ferroelectric FET (FE-FET) with Hf1-x Zrx O2 (HZO) with different sweeping sequences. Devices of the planar capacitor and Gate-All-Around (GAA) with 5.3 × 9 nm2 poly-Silicon nanowire (NW) channel were compared in detail. Despite the fact that PMA of 700°C exhibits the best ferroelectricity for the MFM capacitor, the results of NW FE-FETs are quite different owing to the stress-sensitive crystallization of HZO. We found the ZrO2, seedlayer, can significantly improve the crystallinity of HZO even with PMA-free. An internal-metal-gate (IMG) and/or 2-layer-stacked channel for GAA were demonstrated to improve performance. The inserted TiN as the IMG is found to gain superior S.S.avg of 43.85 mV/decade with 104 of ID. The Ion of GAA can be further boosted by the stacked channel. In addition, the dipole polarization of FE is used to explain the results of examining different sweeping sequences.

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U2 - 10.1109/VLSI-TSA48913.2020.9203642

DO - 10.1109/VLSI-TSA48913.2020.9203642

M3 - Conference contribution

AN - SCOPUS:85093669915

T3 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

SP - 124

EP - 125

BT - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Y2 - 10 August 2020 through 13 August 2020

ER -

Lee SY, Chen HW, Chung CC, Shen CH, Kuo PY, Huang YE et al. Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 124-125. 9203642. (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). doi: 10.1109/VLSI-TSA48913.2020.9203642

Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs

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