TY - GEN
T1 - Investigation of short-channel effects in 2D negative-capacitance field-effect transistors
AU - You, Wei Xiang
AU - Tsai, Chih Peng
AU - Su, Pin
PY - 2018/3/7
Y1 - 2018/3/7
N2 - In this work, the short-channel effects (SCEs) in negative-capacitance FETs with 2D-material channel (2D-NCFET) are systematically investigated through numerical simulation corroborated by a theoretical 2D-NCFET subthreshold model. Our study reveals that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct SCEs. Additionally, for a given equivalent oxide thickness (EOT), the dielectric constant of the high-K interlayer can significantly alter the subthreshold characteristics of the short-channel 2D-NCFETs.
AB - In this work, the short-channel effects (SCEs) in negative-capacitance FETs with 2D-material channel (2D-NCFET) are systematically investigated through numerical simulation corroborated by a theoretical 2D-NCFET subthreshold model. Our study reveals that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct SCEs. Additionally, for a given equivalent oxide thickness (EOT), the dielectric constant of the high-K interlayer can significantly alter the subthreshold characteristics of the short-channel 2D-NCFETs.
UR - http://www.scopus.com/inward/record.url?scp=85047752002&partnerID=8YFLogxK
U2 - 10.1109/S3S.2017.8308758
DO - 10.1109/S3S.2017.8308758
M3 - Conference contribution
AN - SCOPUS:85047752002
T3 - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
SP - 1
EP - 3
BT - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
Y2 - 16 October 2017 through 18 October 2017
ER -