Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor

Kai Jhih Gan; Wei Chiao Chang; Po-Tsun Liu; Simon M. Sze

doi:10.1063/1.5116359

Investigation of resistive switching in copper/InGaZnO/Al₂O₃-based memristor

Kai Jhih Gan, Wei Chiao Chang, Po-Tsun Liu, Simon M. Sze

Department of Photonics

Research output: Contribution to journal › Article › peer-review

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Abstract

This work investigates the resistive switching mechanism in the Cu/TiW/InGaZnO/Al₂O₃/Pt-based memristor. By introducing the Al₂O₃ layer, the nanoscale diameter of the Cu filament decreased from 6.51 to 0.83 nm as the current compliance decreases from 1 mA to 50 μA. The resistive switching memory characteristics, such as a large ratio of high-resistance state (HRS)/low-resistance state (LRS) (∼10⁷), stable switching cycle stability (>9 × 10²), and multilevel operation, are observed and apparently improved compared to the counterpart of the Cu/TiW/InGaZnO/Pt memory device. These results are attributed to the control of Cu formation/dissolution by introducing the Al₂O₃ nanolayer at the InGaZnO/Pt interface. The findings of this study can not only improve the performance of the amorphous InGaZnO memristor but also be promising for potential applications of next-generation flat-panel displays in wearable devices.

Original language	English
Article number	143501
Number of pages	5
Journal	Applied Physics Letters
Volume	115
Issue number	14
DOIs	https://doi.org/10.1063/1.5116359
State	Published - 30 Sep 2019

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title = "Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor",

abstract = "This work investigates the resistive switching mechanism in the Cu/TiW/InGaZnO/Al2O3/Pt-based memristor. By introducing the Al2O3 layer, the nanoscale diameter of the Cu filament decreased from 6.51 to 0.83 nm as the current compliance decreases from 1 mA to 50 μA. The resistive switching memory characteristics, such as a large ratio of high-resistance state (HRS)/low-resistance state (LRS) (∼107), stable switching cycle stability (>9 × 102), and multilevel operation, are observed and apparently improved compared to the counterpart of the Cu/TiW/InGaZnO/Pt memory device. These results are attributed to the control of Cu formation/dissolution by introducing the Al2O3 nanolayer at the InGaZnO/Pt interface. The findings of this study can not only improve the performance of the amorphous InGaZnO memristor but also be promising for potential applications of next-generation flat-panel displays in wearable devices.",

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doi = "10.1063/1.5116359",

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T1 - Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor

AU - Gan, Kai Jhih

AU - Chang, Wei Chiao

AU - Liu, Po-Tsun

AU - Sze, Simon M.

PY - 2019/9/30

Y1 - 2019/9/30

N2 - This work investigates the resistive switching mechanism in the Cu/TiW/InGaZnO/Al2O3/Pt-based memristor. By introducing the Al2O3 layer, the nanoscale diameter of the Cu filament decreased from 6.51 to 0.83 nm as the current compliance decreases from 1 mA to 50 μA. The resistive switching memory characteristics, such as a large ratio of high-resistance state (HRS)/low-resistance state (LRS) (∼107), stable switching cycle stability (>9 × 102), and multilevel operation, are observed and apparently improved compared to the counterpart of the Cu/TiW/InGaZnO/Pt memory device. These results are attributed to the control of Cu formation/dissolution by introducing the Al2O3 nanolayer at the InGaZnO/Pt interface. The findings of this study can not only improve the performance of the amorphous InGaZnO memristor but also be promising for potential applications of next-generation flat-panel displays in wearable devices.

AB - This work investigates the resistive switching mechanism in the Cu/TiW/InGaZnO/Al2O3/Pt-based memristor. By introducing the Al2O3 layer, the nanoscale diameter of the Cu filament decreased from 6.51 to 0.83 nm as the current compliance decreases from 1 mA to 50 μA. The resistive switching memory characteristics, such as a large ratio of high-resistance state (HRS)/low-resistance state (LRS) (∼107), stable switching cycle stability (>9 × 102), and multilevel operation, are observed and apparently improved compared to the counterpart of the Cu/TiW/InGaZnO/Pt memory device. These results are attributed to the control of Cu formation/dissolution by introducing the Al2O3 nanolayer at the InGaZnO/Pt interface. The findings of this study can not only improve the performance of the amorphous InGaZnO memristor but also be promising for potential applications of next-generation flat-panel displays in wearable devices.

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JO - Applied Physics Letters

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Investigation of resistive switching in copper/InGaZnO/Al₂O₃-based memristor

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