Investigation of random telegraph signal with PD SOI MOSFETs

Ching En Chen*, Ting Chang Chang, Hung Ping Lo, Szu Han Ho, Wen Hung Lo, Tseung-Yuen Tseng, Osbert Cheng, Cheng Tung Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

A novel method, called random telegraphy signal (RTS), was constructed to characterize the gate oxide quality and reliability of metal-oxide-semiconductor field-effect-transistors (MOSFETs). With the aggressive scaling of device size, drain current RTS (I D-RTS) become a critical role in carrier transport of MOSFETs. Besides, RTS in gate leakage current (I G-RTS) was denoted as the other new method to understand property of gate oxide. Recently, the study of RTS has also been made in MOSFETs with metal gate and high dielectric constant (metal gate/high-k). However, the RTS in partial depleted silicon-on-insulator MOSFETs (PD SOI MOSFETs) has not comprehensively been studied yet. This paper investigates RTS characteristics in PD SOI MOSFETs.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages261-271
Number of pages11
Edition3
DOIs
StatePublished - 19 Nov 2012
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/TerritoryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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