Investigation of quantum dots light emitting diodes with different transition metal oxide as charge injection layers

Hsin Chieh Yu; Qian Hua Zhuo; Jing Teng Shi; Kuei Hung Chu

doi:10.1016/j.orgel.2022.106646

Investigation of quantum dots light emitting diodes with different transition metal oxide as charge injection layers

Hsin Chieh Yu^*, Qian Hua Zhuo, Jing Teng Shi, Kuei Hung Chu

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper, various transition metal oxides serve as charge injection layers being prepared by solution process for the fabrication of quantum dot light emitting diodes (QLEDs) is demonstrated. Magnesium doped zinc oxide (MgZnO) nanoparticles is used as electron injection and transport layer, copper oxide (CuO_x), nickel oxide (NiO_x), cobalt oxide (CoO_x) and molybdenum oxide (MoO_x) are used as hole injection layer (HIL) for the comparison with Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS. The fabricated red QLEDs with PEDOT:PSS possess highest maximum luminance of 88,713 cd/m² and current efficiency of 4.96 cd/A, whereas QLEDs with MoO_x and NiO_x HILs demonstrate lower turn on voltage of 1.5V and 2.1V and maintain decent maximum luminance of 59,699 and 64,244 cd/m², respectively. The sub-bandgap turn-on voltage of QLED with MoO_x can be attributed to thermal-assisted energy up-conversion effect due to its lower series resistance.

Original language	English
Article number	106646
Journal	Organic Electronics
Volume	110
DOIs	https://doi.org/10.1016/j.orgel.2022.106646
State	Published - Nov 2022

Keywords

Light emitting diodes
Metal oxide
Nanostructure
Quantum dots
Solution process

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10.1016/j.orgel.2022.106646

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title = "Investigation of quantum dots light emitting diodes with different transition metal oxide as charge injection layers",

abstract = "In this paper, various transition metal oxides serve as charge injection layers being prepared by solution process for the fabrication of quantum dot light emitting diodes (QLEDs) is demonstrated. Magnesium doped zinc oxide (MgZnO) nanoparticles is used as electron injection and transport layer, copper oxide (CuOx), nickel oxide (NiOx), cobalt oxide (CoOx) and molybdenum oxide (MoOx) are used as hole injection layer (HIL) for the comparison with Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS. The fabricated red QLEDs with PEDOT:PSS possess highest maximum luminance of 88,713 cd/m2 and current efficiency of 4.96 cd/A, whereas QLEDs with MoOx and NiOx HILs demonstrate lower turn on voltage of 1.5V and 2.1V and maintain decent maximum luminance of 59,699 and 64,244 cd/m2, respectively. The sub-bandgap turn-on voltage of QLED with MoOx can be attributed to thermal-assisted energy up-conversion effect due to its lower series resistance.",

keywords = "Light emitting diodes, Metal oxide, Nanostructure, Quantum dots, Solution process",

author = "Yu, {Hsin Chieh} and Zhuo, {Qian Hua} and Shi, {Jing Teng} and Chu, {Kuei Hung}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = nov,

doi = "10.1016/j.orgel.2022.106646",

language = "English",

volume = "110",

journal = "Organic Electronics",

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TY - JOUR

T1 - Investigation of quantum dots light emitting diodes with different transition metal oxide as charge injection layers

AU - Yu, Hsin Chieh

AU - Zhuo, Qian Hua

AU - Shi, Jing Teng

AU - Chu, Kuei Hung

PY - 2022/11

Y1 - 2022/11

N2 - In this paper, various transition metal oxides serve as charge injection layers being prepared by solution process for the fabrication of quantum dot light emitting diodes (QLEDs) is demonstrated. Magnesium doped zinc oxide (MgZnO) nanoparticles is used as electron injection and transport layer, copper oxide (CuOx), nickel oxide (NiOx), cobalt oxide (CoOx) and molybdenum oxide (MoOx) are used as hole injection layer (HIL) for the comparison with Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS. The fabricated red QLEDs with PEDOT:PSS possess highest maximum luminance of 88,713 cd/m2 and current efficiency of 4.96 cd/A, whereas QLEDs with MoOx and NiOx HILs demonstrate lower turn on voltage of 1.5V and 2.1V and maintain decent maximum luminance of 59,699 and 64,244 cd/m2, respectively. The sub-bandgap turn-on voltage of QLED with MoOx can be attributed to thermal-assisted energy up-conversion effect due to its lower series resistance.

AB - In this paper, various transition metal oxides serve as charge injection layers being prepared by solution process for the fabrication of quantum dot light emitting diodes (QLEDs) is demonstrated. Magnesium doped zinc oxide (MgZnO) nanoparticles is used as electron injection and transport layer, copper oxide (CuOx), nickel oxide (NiOx), cobalt oxide (CoOx) and molybdenum oxide (MoOx) are used as hole injection layer (HIL) for the comparison with Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS. The fabricated red QLEDs with PEDOT:PSS possess highest maximum luminance of 88,713 cd/m2 and current efficiency of 4.96 cd/A, whereas QLEDs with MoOx and NiOx HILs demonstrate lower turn on voltage of 1.5V and 2.1V and maintain decent maximum luminance of 59,699 and 64,244 cd/m2, respectively. The sub-bandgap turn-on voltage of QLED with MoOx can be attributed to thermal-assisted energy up-conversion effect due to its lower series resistance.

KW - Light emitting diodes

KW - Metal oxide

KW - Nanostructure

KW - Quantum dots

KW - Solution process

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U2 - 10.1016/j.orgel.2022.106646

DO - 10.1016/j.orgel.2022.106646

M3 - Article

AN - SCOPUS:85138836885

SN - 1566-1199

VL - 110

JO - Organic Electronics

JF - Organic Electronics

M1 - 106646

ER -

Investigation of quantum dots light emitting diodes with different transition metal oxide as charge injection layers

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Keywords

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