Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation

Hang Hu; Shi Jin Ding; Chunxiang Zhu; Subhash C. Rustagi; Y. F. Lu; M. F. Li; Byung Jin Cho; Daniel Sh Chan; M. B. Yu; Albert Chin; Dim Lee Kwong

doi:10.1109/ISDRS.2003.1272118

Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation

Hang Hu, Shi Jin Ding, Chunxiang Zhu, Subhash C. Rustagi, Y. F. Lu, M. F. Li, Byung Jin Cho, Daniel Sh Chan, M. B. Yu, Albert Chin, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this work we investigated the electrical characteristics of high-k PVD Hf02 metalinsulator- metal (MIM) capacitors from IF (10 kHz) to RF (20 GHz) frequency range. High-K Hf02 dielectric with two thicknesses of 22 and 47 nm were fabricated, the respective capacitance densities are 7.3 and 3.5 fFlμm2, and the two samples are denoted as HfO-1 to Hf0-2 in this paper. Fig. 1 presents the structure of PVD Hf0₂ MIM capacitors, the detailed fabrication process could be found elsewhere [1].

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	328-329
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1272118
State	Published - 2003
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: 10 Dec 2003 → 12 Dec 2003

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

Conference	International Semiconductor Device Research Symposium, ISDRS 2003
Country/Territory	United States
City	Washington
Period	10/12/03 → 12/12/03

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10.1109/ISDRS.2003.1272118

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Hu, H., Ding, S. J., Zhu, C., Rustagi, S. C., Lu, Y. F., Li, M. F., Cho, B. J., Chan, D. S., Yu, M. B., Chin, A., & Kwong, D. L. (2003). Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 328-329). Article 1272118 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272118

Hu, Hang ; Ding, Shi Jin ; Zhu, Chunxiang et al. / Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 328-329 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

@inproceedings{904e8b1163a94bbbbd7bf0760e47fcba,

title = "Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation",

abstract = "In this work we investigated the electrical characteristics of high-k PVD Hf02 metalinsulator- metal (MIM) capacitors from IF (10 kHz) to RF (20 GHz) frequency range. High-K Hf02 dielectric with two thicknesses of 22 and 47 nm were fabricated, the respective capacitance densities are 7.3 and 3.5 fFlμm2, and the two samples are denoted as HfO-1 to Hf0-2 in this paper. Fig. 1 presents the structure of PVD Hf02 MIM capacitors, the detailed fabrication process could be found elsewhere [1].",

author = "Hang Hu and Ding, {Shi Jin} and Chunxiang Zhu and Rustagi, {Subhash C.} and Lu, {Y. F.} and Li, {M. F.} and Cho, {Byung Jin} and Chan, {Daniel Sh} and Yu, {M. B.} and Albert Chin and Kwong, {Dim Lee}",

year = "2003",

doi = "10.1109/ISDRS.2003.1272118",

language = "English",

series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "328--329",

booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

address = "美國",

note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

}

Hu, H, Ding, SJ, Zhu, C, Rustagi, SC, Lu, YF, Li, MF, Cho, BJ, Chan, DS, Yu, MB, Chin, A & Kwong, DL 2003, Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272118, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 328-329, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 10/12/03. https://doi.org/10.1109/ISDRS.2003.1272118

Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation. / Hu, Hang; Ding, Shi Jin; Zhu, Chunxiang et al.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 328-329 1272118 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation

AU - Hu, Hang

AU - Ding, Shi Jin

AU - Zhu, Chunxiang

AU - Rustagi, Subhash C.

AU - Lu, Y. F.

AU - Li, M. F.

AU - Cho, Byung Jin

AU - Chan, Daniel Sh

AU - Yu, M. B.

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2003

Y1 - 2003

N2 - In this work we investigated the electrical characteristics of high-k PVD Hf02 metalinsulator- metal (MIM) capacitors from IF (10 kHz) to RF (20 GHz) frequency range. High-K Hf02 dielectric with two thicknesses of 22 and 47 nm were fabricated, the respective capacitance densities are 7.3 and 3.5 fFlμm2, and the two samples are denoted as HfO-1 to Hf0-2 in this paper. Fig. 1 presents the structure of PVD Hf02 MIM capacitors, the detailed fabrication process could be found elsewhere [1].

AB - In this work we investigated the electrical characteristics of high-k PVD Hf02 metalinsulator- metal (MIM) capacitors from IF (10 kHz) to RF (20 GHz) frequency range. High-K Hf02 dielectric with two thicknesses of 22 and 47 nm were fabricated, the respective capacitance densities are 7.3 and 3.5 fFlμm2, and the two samples are denoted as HfO-1 to Hf0-2 in this paper. Fig. 1 presents the structure of PVD Hf02 MIM capacitors, the detailed fabrication process could be found elsewhere [1].

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U2 - 10.1109/ISDRS.2003.1272118

DO - 10.1109/ISDRS.2003.1272118

M3 - Conference contribution

AN - SCOPUS:84945298498

T3 - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

SP - 328

EP - 329

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2003

Y2 - 10 December 2003 through 12 December 2003

ER -

Hu H, Ding SJ, Zhu C, Rustagi SC, Lu YF, Li MF et al. Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 328-329. 1272118. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1272118

Investigation of PVD HfO2 MIM eapaeitors for Si RF and mixed signal ICs applieation

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