Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C

Yu Xin Wen; Chia Hua Wang; Yi Kai Hsiao; Chia Lung Hung; Bing Yue Tsui

doi:10.1109/WiPDAAsia58218.2023.10261894

Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C

Yu Xin Wen^*, Chia Hua Wang, Yi Kai Hsiao, Chia Lung Hung, Bing Yue Tsui

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Considerable effort has been devoted to studying the bias temperature instability (BTI) of SiC metal-oxidesemiconductor (MOS) devices to identify the effect of slower states from either charge trapping at SiC SiO₂ interface or within gate insulator. However, since trap time constant related to both spatial or energy distribution, it's difficult to distinguish effects of interface states (N_it) and near-interface oxide traps (NITs). In this study, we evaluate the positive bias temperature instability (PBTI) of the gate oxide on 4 H-SiC up to 300° C and extract deep N_it down to EC-1.4 eV to identify the mechanism of PBTI of SiC MOS capacitors.

Original language	English
Title of host publication	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350337112
DOIs	https://doi.org/10.1109/WiPDAAsia58218.2023.10261894
State	Published - 2023
Event	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan Duration: 27 Aug 2023 → 29 Aug 2023

Publication series

Name	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
Country/Territory	Taiwan
City	Hsinchu
Period	27/08/23 → 29/08/23

Keywords

deep interface states
near-interface oxide traps
Poole-Frenkel emission
positive bias temperature instability
Silicon carbide
trap-assisted tunneling

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10.1109/WiPDAAsia58218.2023.10261894

Cite this

Wen, Y. X., Wang, C. H., Hsiao, Y. K., Hung, C. L., & Tsui, B. Y. (2023). Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. In WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia58218.2023.10261894

Wen, Yu Xin ; Wang, Chia Hua ; Hsiao, Yi Kai et al. / Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

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title = "Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C",

abstract = "Considerable effort has been devoted to studying the bias temperature instability (BTI) of SiC metal-oxidesemiconductor (MOS) devices to identify the effect of slower states from either charge trapping at SiC SiO2 interface or within gate insulator. However, since trap time constant related to both spatial or energy distribution, it's difficult to distinguish effects of interface states (Nit) and near-interface oxide traps (NITs). In this study, we evaluate the positive bias temperature instability (PBTI) of the gate oxide on 4 H-SiC up to 300° C and extract deep Nit down to EC-1.4 eV to identify the mechanism of PBTI of SiC MOS capacitors.",

keywords = "deep interface states, near-interface oxide traps, Poole-Frenkel emission, positive bias temperature instability, Silicon carbide, trap-assisted tunneling",

author = "Wen, {Yu Xin} and Wang, {Chia Hua} and Hsiao, {Yi Kai} and Hung, {Chia Lung} and Tsui, {Bing Yue}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",

year = "2023",

doi = "10.1109/WiPDAAsia58218.2023.10261894",

language = "English",

series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

address = "美國",

}

Wen, YX, Wang, CH, Hsiao, YK, Hung, CL & Tsui, BY 2023, Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. in WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023, Hsinchu, Taiwan, 27/08/23. https://doi.org/10.1109/WiPDAAsia58218.2023.10261894

Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. / Wen, Yu Xin; Wang, Chia Hua; Hsiao, Yi Kai et al.
WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C

AU - Wen, Yu Xin

AU - Wang, Chia Hua

AU - Hsiao, Yi Kai

AU - Hung, Chia Lung

AU - Tsui, Bing Yue

PY - 2023

Y1 - 2023

N2 - Considerable effort has been devoted to studying the bias temperature instability (BTI) of SiC metal-oxidesemiconductor (MOS) devices to identify the effect of slower states from either charge trapping at SiC SiO2 interface or within gate insulator. However, since trap time constant related to both spatial or energy distribution, it's difficult to distinguish effects of interface states (Nit) and near-interface oxide traps (NITs). In this study, we evaluate the positive bias temperature instability (PBTI) of the gate oxide on 4 H-SiC up to 300° C and extract deep Nit down to EC-1.4 eV to identify the mechanism of PBTI of SiC MOS capacitors.

AB - Considerable effort has been devoted to studying the bias temperature instability (BTI) of SiC metal-oxidesemiconductor (MOS) devices to identify the effect of slower states from either charge trapping at SiC SiO2 interface or within gate insulator. However, since trap time constant related to both spatial or energy distribution, it's difficult to distinguish effects of interface states (Nit) and near-interface oxide traps (NITs). In this study, we evaluate the positive bias temperature instability (PBTI) of the gate oxide on 4 H-SiC up to 300° C and extract deep Nit down to EC-1.4 eV to identify the mechanism of PBTI of SiC MOS capacitors.

KW - deep interface states

KW - near-interface oxide traps

KW - Poole-Frenkel emission

KW - positive bias temperature instability

KW - Silicon carbide

KW - trap-assisted tunneling

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M3 - Conference contribution

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T3 - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

BT - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023

Y2 - 27 August 2023 through 29 August 2023

ER -

Wen YX, Wang CH, Hsiao YK, Hung CL, Tsui BY. Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. In WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc. 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). doi: 10.1109/WiPDAAsia58218.2023.10261894

Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C

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