TY - GEN
T1 - Investigation of photo-induced leakage on low-k hydrogen silsesquioxane for active matrix liquid crystal display technology
AU - Liu, Po-Tsun
AU - Liu, Bin Lin
AU - Tsai, T. M.
AU - Chen, C. W.
AU - Chang, T. C.
AU - Wu, You Lin
AU - Lee, J. K.
AU - Chen, Grace
AU - Tsai, Eric
AU - Chang, Joe
PY - 2004/10/26
Y1 - 2004/10/26
N2 - Summary form only given. Flat panel liquid crystal display (LCD) has been received much interest due to its light weight, smaller volume, and large area when compared with the conventional cathode-ray-tube (CRT) display. Thin film transistors (TFTs) has been used as the driver and switch elements and become indispensable in active matrix LCD display. In the conventional TFT pixel design, due to using silicon nitride as a passivation layer, edges of the pixel electrodes are retracted from the gate and data signal lines to minimize the coupling capacitance which causes cross-talk and signal distortion. Thus, black matrix (BM) will cover relatively larger inactive areas, leading to a decreased aperture ratio. The adoption of low-dielectric-constant (low-k) films for TFT passivation layer can effectively increase the aperture ration of display matrix, reducing resistance-capacitance (RC) delay, exhibiting high optical transparency, and good planarization properties.
AB - Summary form only given. Flat panel liquid crystal display (LCD) has been received much interest due to its light weight, smaller volume, and large area when compared with the conventional cathode-ray-tube (CRT) display. Thin film transistors (TFTs) has been used as the driver and switch elements and become indispensable in active matrix LCD display. In the conventional TFT pixel design, due to using silicon nitride as a passivation layer, edges of the pixel electrodes are retracted from the gate and data signal lines to minimize the coupling capacitance which causes cross-talk and signal distortion. Thus, black matrix (BM) will cover relatively larger inactive areas, leading to a decreased aperture ratio. The adoption of low-dielectric-constant (low-k) films for TFT passivation layer can effectively increase the aperture ration of display matrix, reducing resistance-capacitance (RC) delay, exhibiting high optical transparency, and good planarization properties.
UR - http://www.scopus.com/inward/record.url?scp=23244456096&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2004.245794
DO - 10.1109/IMNC.2004.245794
M3 - Conference contribution
AN - SCOPUS:23244456096
SN - 4990247205
SN - 9784990247201
T3 - Digest of Papers - Microprocesses and Nanotechnology 2004
SP - 202
BT - Digest of Papers - Microprocesses and Nanotechnology 2004
T2 - 2004 International Microprocesses and Nanotechnology Conference
Y2 - 26 October 2004 through 29 October 2004
ER -