Investigation of nonvolatile memory effect of organic thin-film transistors with triple dielectric layers

Hsin-Chieh Yu; Ying Chih Chen; Chun Yuan Huang; Yan Kuin Su

doi:10.1143/APEX.5.034101

Investigation of nonvolatile memory effect of organic thin-film transistors with triple dielectric layers

Hsin-Chieh Yu, Ying Chih Chen, Chun Yuan Huang, Yan Kuin Su^*

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Pentacene thin-film transistor (TFT) memory using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer dielectric layers has been developed. The electric performance and memory behaviors of memory TFTs can be significantly improved by using triple polymer dielectric layers consisting of PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA. This can be attributed to the improvement of the channel/dielectric interface. This memory effect is due to the charge storage of the dipolar group or molecules in the dielectric. The devices exhibit a wide memory window (ΔV _th, >20 V), switchable channel current, and long retention time.

Original language	English
Article number	034101
Journal	Applied Physics Express
Volume	5
Issue number	3
DOIs	https://doi.org/10.1143/APEX.5.034101
State	Published - 1 Mar 2012

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abstract = "Pentacene thin-film transistor (TFT) memory using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer dielectric layers has been developed. The electric performance and memory behaviors of memory TFTs can be significantly improved by using triple polymer dielectric layers consisting of PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA. This can be attributed to the improvement of the channel/dielectric interface. This memory effect is due to the charge storage of the dipolar group or molecules in the dielectric. The devices exhibit a wide memory window (ΔV th, >20 V), switchable channel current, and long retention time.",

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AU - Yu, Hsin-Chieh

AU - Chen, Ying Chih

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AU - Su, Yan Kuin

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Y1 - 2012/3/1

N2 - Pentacene thin-film transistor (TFT) memory using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer dielectric layers has been developed. The electric performance and memory behaviors of memory TFTs can be significantly improved by using triple polymer dielectric layers consisting of PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA. This can be attributed to the improvement of the channel/dielectric interface. This memory effect is due to the charge storage of the dipolar group or molecules in the dielectric. The devices exhibit a wide memory window (ΔV th, >20 V), switchable channel current, and long retention time.

AB - Pentacene thin-film transistor (TFT) memory using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer dielectric layers has been developed. The electric performance and memory behaviors of memory TFTs can be significantly improved by using triple polymer dielectric layers consisting of PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA. This can be attributed to the improvement of the channel/dielectric interface. This memory effect is due to the charge storage of the dipolar group or molecules in the dielectric. The devices exhibit a wide memory window (ΔV th, >20 V), switchable channel current, and long retention time.

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VL - 5

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Investigation of nonvolatile memory effect of organic thin-film transistors with triple dielectric layers

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