Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

Dong Ru Hsieh; Kun Cheng Lin; Tien-Sheng Chao

doi:10.1109/JEDS.2019.2896599

Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

Dong Ru Hsieh, Kun Cheng Lin, Tien-Sheng Chao^*

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, the influence of nitrous oxide (N₂O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N₂O nitridation temperatures (T_N) from 700 °C to 800 °C in N₂O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (I_ON ), and enhancement of TEOS gate oxide breakdown E -field (E_OBD). PG JAM TFTs by means of a proper channel doping concentration (N_ch= 5 × 10¹⁸ cm^-3) and a suitable T_N (800 °C) exhibit a steep A.S.S. 96 mV/dec. and a large E_OBD ∼ 12.1 MV/cm.

Original language	English
Article number	8630465
Pages (from-to)	268-275
Number of pages	8
Journal	IEEE Journal of the Electron Devices Society
Volume	7
DOIs	https://doi.org/10.1109/JEDS.2019.2896599
State	Published - 1 Jan 2019

Keywords

3-D integrated circuits (ICs)
Pi-gate (PG)
junctionless accumulation mode (JAM)
nitrous oxide (Nâ O)
poly-Si
reverse boron penetration

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title = "Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs",

abstract = "In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures (TN) from 700 °C to 800 °C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION ), and enhancement of TEOS gate oxide breakdown E -field (EOBD). PG JAM TFTs by means of a proper channel doping concentration (Nch= 5 × 1018 cm-3) and a suitable TN (800 °C) exhibit a steep A.S.S. 96 mV/dec. and a large EOBD ∼ 12.1 MV/cm.",

keywords = "3-D integrated circuits (ICs), Pi-gate (PG), junctionless accumulation mode (JAM), nitrous oxide (N{\^a} O), poly-Si, reverse boron penetration",

author = "Hsieh, {Dong Ru} and Lin, {Kun Cheng} and Tien-Sheng Chao",

year = "2019",

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doi = "10.1109/JEDS.2019.2896599",

language = "English",

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AU - Hsieh, Dong Ru

AU - Lin, Kun Cheng

AU - Chao, Tien-Sheng

PY - 2019/1/1

Y1 - 2019/1/1

N2 - In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures (TN) from 700 °C to 800 °C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION ), and enhancement of TEOS gate oxide breakdown E -field (EOBD). PG JAM TFTs by means of a proper channel doping concentration (Nch= 5 × 1018 cm-3) and a suitable TN (800 °C) exhibit a steep A.S.S. 96 mV/dec. and a large EOBD ∼ 12.1 MV/cm.

AB - In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures (TN) from 700 °C to 800 °C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION ), and enhancement of TEOS gate oxide breakdown E -field (EOBD). PG JAM TFTs by means of a proper channel doping concentration (Nch= 5 × 1018 cm-3) and a suitable TN (800 °C) exhibit a steep A.S.S. 96 mV/dec. and a large EOBD ∼ 12.1 MV/cm.

KW - 3-D integrated circuits (ICs)

KW - Pi-gate (PG)

KW - junctionless accumulation mode (JAM)

KW - nitrous oxide (Nâ O)

KW - poly-Si

KW - reverse boron penetration

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U2 - 10.1109/JEDS.2019.2896599

DO - 10.1109/JEDS.2019.2896599

M3 - Article

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SN - 2168-6734

VL - 7

SP - 268

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JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

M1 - 8630465

ER -

Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

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Keywords

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