Investigation of NH₃Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs

Keyphrases

• Poly-Si 100%
• Nitridation 100%
• Gate-all-around 100%
• NH3 Plasma 100%
• Hysteresis-free 100%
• Ferroelectric Field-effect Transistor (FeFET) 100%
• Si Nanosheets 100%
• Plasma Nitridation 66%
• Low Power Consumption 33%
• Double Layer 33%
• Electrical Characteristics 33%
• 3D IC 33%
• Silicon Oxynitride (SiON) 33%
• Interfacial Layer 33%
• ION-IOFF 33%
• Oxygen Vacancy 33%
• Circuit Application 33%
• Low Subthreshold Swing 33%
• Breakdown Voltage 33%
• On-off Ratio 33%
• Passivated 33%
• Monolithic 3-D (M3-D) 33%
• Bulk Defects 33%
• CexZr1-xO2 33%
• Metal-oxide Interface 33%

Material Science

• Nitriding 100%
• Nanosheet 100%
• Ferroelectric Material 33%
• Electrical Property 33%
• Field Effect Transistor 33%
• Electronic Circuit 33%
• Oxygen Vacancy 33%
• Ferroelectricity 33%
• Metal-Oxide Interface 33%