Investigation of NH3Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs

Dong Ru Hsieh; Chia Chin Lee; Zi Yang Hong; Tien Sheng Chao

doi:10.1109/EDTM53872.2022.9798318

Investigation of NH₃Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs

Dong Ru Hsieh, Chia Chin Lee, Zi Yang Hong, Tien Sheng Chao^*

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this study, hysteresis-free double-layer gate-all-around stacked poly-Si nanosheet channel ferroelectric field-effect transistors (DL GAA NS FeFETs) and NH3 plasma nitridation have been investigated and discussed. The NH3 plasma nitridation at both metal/oxide interfaces can effectively improve the HfxZr1-xO2 (HZO) ferroelectricity and quality by reducing the amount of oxygen vacancy (Vo) as well as enhance the SiON interfacial layer quality by passivating the bulk defects. Therefore, devices can show the most excellent electrical characteristics: 1) extremely low subthreshold swing (S.S.) 45.77 mV/decade, 2) high ON/OFF current ratio (ION/IOFF) > 5 × 107, and 3) high effective breakdown voltage (VEBD) 6.7 V at VD = 0.1 V. These devices are very promising candidates for the low-power-consumption monolithic 3-D integrated circuit (IC) applications.

Original language	English
Title of host publication	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	24-26
Number of pages	3
ISBN (Electronic)	9781665421775
DOIs	https://doi.org/10.1109/EDTM53872.2022.9798318
State	Published - 2022
Event	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan Duration: 6 Mar 2022 → 9 Mar 2022

Publication series

Name	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/Territory	Japan
City	Virtual, Online
Period	6/03/22 → 9/03/22

Keywords

FeFET
ferroelectricity
Gate-all-around (GAA)
HfZrO(HZO)
monolithic 3-D integrated circuit (IC)
NHplasma nitridation
poly-Si
seed layer
stacked nanosheet (NS) channel

Access to Document

10.1109/EDTM53872.2022.9798318

Cite this

Hsieh, D. R., Lee, C. C., Hong, Z. Y., & Chao, T. S. (2022). Investigation of NH₃Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 (pp. 24-26). (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM53872.2022.9798318

Hsieh, Dong Ru ; Lee, Chia Chin ; Hong, Zi Yang et al. / Investigation of NH₃Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 24-26 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

@inproceedings{a709e72e3f6b4d1087aa45a4acb22e9d,

title = "Investigation of NH3Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs",

abstract = "In this study, hysteresis-free double-layer gate-all-around stacked poly-Si nanosheet channel ferroelectric field-effect transistors (DL GAA NS FeFETs) and NH3 plasma nitridation have been investigated and discussed. The NH3 plasma nitridation at both metal/oxide interfaces can effectively improve the HfxZr1-xO2 (HZO) ferroelectricity and quality by reducing the amount of oxygen vacancy (Vo) as well as enhance the SiON interfacial layer quality by passivating the bulk defects. Therefore, devices can show the most excellent electrical characteristics: 1) extremely low subthreshold swing (S.S.) 45.77 mV/decade, 2) high ON/OFF current ratio (ION/IOFF) > 5 × 107, and 3) high effective breakdown voltage (VEBD) 6.7 V at VD = 0.1 V. These devices are very promising candidates for the low-power-consumption monolithic 3-D integrated circuit (IC) applications.",

keywords = "FeFET, ferroelectricity, Gate-all-around (GAA), HfZrO(HZO), monolithic 3-D integrated circuit (IC), NHplasma nitridation, poly-Si, seed layer, stacked nanosheet (NS) channel",

author = "Hsieh, {Dong Ru} and Lee, {Chia Chin} and Hong, {Zi Yang} and Chao, {Tien Sheng}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",

year = "2022",

doi = "10.1109/EDTM53872.2022.9798318",

language = "English",

series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "24--26",

booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

address = "美國",

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Hsieh, DR, Lee, CC, Hong, ZY & Chao, TS 2022, Investigation of NH₃Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs. in 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Institute of Electrical and Electronics Engineers Inc., pp. 24-26, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Virtual, Online, Japan, 6/03/22. https://doi.org/10.1109/EDTM53872.2022.9798318

Investigation of NH₃Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs. / Hsieh, Dong Ru; Lee, Chia Chin; Hong, Zi Yang et al.
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 24-26 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of NH3Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs

AU - Hsieh, Dong Ru

AU - Lee, Chia Chin

AU - Hong, Zi Yang

AU - Chao, Tien Sheng

PY - 2022

Y1 - 2022

N2 - In this study, hysteresis-free double-layer gate-all-around stacked poly-Si nanosheet channel ferroelectric field-effect transistors (DL GAA NS FeFETs) and NH3 plasma nitridation have been investigated and discussed. The NH3 plasma nitridation at both metal/oxide interfaces can effectively improve the HfxZr1-xO2 (HZO) ferroelectricity and quality by reducing the amount of oxygen vacancy (Vo) as well as enhance the SiON interfacial layer quality by passivating the bulk defects. Therefore, devices can show the most excellent electrical characteristics: 1) extremely low subthreshold swing (S.S.) 45.77 mV/decade, 2) high ON/OFF current ratio (ION/IOFF) > 5 × 107, and 3) high effective breakdown voltage (VEBD) 6.7 V at VD = 0.1 V. These devices are very promising candidates for the low-power-consumption monolithic 3-D integrated circuit (IC) applications.

AB - In this study, hysteresis-free double-layer gate-all-around stacked poly-Si nanosheet channel ferroelectric field-effect transistors (DL GAA NS FeFETs) and NH3 plasma nitridation have been investigated and discussed. The NH3 plasma nitridation at both metal/oxide interfaces can effectively improve the HfxZr1-xO2 (HZO) ferroelectricity and quality by reducing the amount of oxygen vacancy (Vo) as well as enhance the SiON interfacial layer quality by passivating the bulk defects. Therefore, devices can show the most excellent electrical characteristics: 1) extremely low subthreshold swing (S.S.) 45.77 mV/decade, 2) high ON/OFF current ratio (ION/IOFF) > 5 × 107, and 3) high effective breakdown voltage (VEBD) 6.7 V at VD = 0.1 V. These devices are very promising candidates for the low-power-consumption monolithic 3-D integrated circuit (IC) applications.

KW - FeFET

KW - ferroelectricity

KW - Gate-all-around (GAA)

KW - HfZrO(HZO)

KW - monolithic 3-D integrated circuit (IC)

KW - NHplasma nitridation

KW - poly-Si

KW - seed layer

KW - stacked nanosheet (NS) channel

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U2 - 10.1109/EDTM53872.2022.9798318

DO - 10.1109/EDTM53872.2022.9798318

M3 - Conference contribution

AN - SCOPUS:85133961586

T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

SP - 24

EP - 26

BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Y2 - 6 March 2022 through 9 March 2022

ER -

Hsieh DR, Lee CC, Hong ZY, Chao TS. Investigation of NH₃Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 24-26. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). doi: 10.1109/EDTM53872.2022.9798318