Investigation of NH3Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs

Dong Ru Hsieh, Chia Chin Lee, Zi Yang Hong, Tien Sheng Chao*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, hysteresis-free double-layer gate-all-around stacked poly-Si nanosheet channel ferroelectric field-effect transistors (DL GAA NS FeFETs) and NH3 plasma nitridation have been investigated and discussed. The NH3 plasma nitridation at both metal/oxide interfaces can effectively improve the HfxZr1-xO2 (HZO) ferroelectricity and quality by reducing the amount of oxygen vacancy (Vo) as well as enhance the SiON interfacial layer quality by passivating the bulk defects. Therefore, devices can show the most excellent electrical characteristics: 1) extremely low subthreshold swing (S.S.) 45.77 mV/decade, 2) high ON/OFF current ratio (ION/IOFF) > 5 × 107, and 3) high effective breakdown voltage (VEBD) 6.7 V at VD = 0.1 V. These devices are very promising candidates for the low-power-consumption monolithic 3-D integrated circuit (IC) applications.

Original languageEnglish
Title of host publication6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages24-26
Number of pages3
ISBN (Electronic)9781665421775
DOIs
StatePublished - 2022
Event6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
Duration: 6 Mar 20229 Mar 2022

Publication series

Name6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/TerritoryJapan
CityVirtual, Online
Period6/03/229/03/22

Keywords

  • FeFET
  • ferroelectricity
  • Gate-all-around (GAA)
  • HfZrO(HZO)
  • monolithic 3-D integrated circuit (IC)
  • NHplasma nitridation
  • poly-Si
  • seed layer
  • stacked nanosheet (NS) channel

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