Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation

Hao Jen Chang; Ke Hsi Chiang; Yu Ming Jao; Yuan Chao Wang; Jian Jang Huang; Hao Chung Kuo; Chien Chung Lin

doi:10.1364/cleo_at.2024.atu4j.3

Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation

Hao Jen Chang, Ke Hsi Chiang, Yu Ming Jao, Yuan Chao Wang, Jian Jang Huang, Hao Chung Kuo, Chien Chung Lin

Research output: Contribution to conference › Paper › peer-review

Abstract

We fabricated and demonstrated 2-micron InGaN micro LEDs. The devices can work with ALD passivation and exhibit high quantum efficiencies. As high as 7.36% of quantum efficiency can be obtained in 100-micron devices. The current-dependent emission peak shift can be seen as an indicator of device's thermal issues.

Original language	English
DOIs	https://doi.org/10.1364/cleo_at.2024.atu4j.3
State	Published - 2024
Event	CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics - Charlotte, United States Duration: 5 May 2024 → 10 May 2024

Conference

Conference	CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics
Country/Territory	United States
City	Charlotte
Period	5/05/24 → 10/05/24

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10.1364/cleo_at.2024.atu4j.3

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Chang, H. J., Chiang, K. H., Jao, Y. M., Wang, Y. C., Huang, J. J., Kuo, H. C., & Lin, C. C. (2024). Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation. Paper presented at CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics, Charlotte, United States. https://doi.org/10.1364/cleo_at.2024.atu4j.3

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title = "Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation",

abstract = "We fabricated and demonstrated 2-micron InGaN micro LEDs. The devices can work with ALD passivation and exhibit high quantum efficiencies. As high as 7.36% of quantum efficiency can be obtained in 100-micron devices. The current-dependent emission peak shift can be seen as an indicator of device's thermal issues.",

author = "Chang, {Hao Jen} and Chiang, {Ke Hsi} and Jao, {Yu Ming} and Wang, {Yuan Chao} and Huang, {Jian Jang} and Kuo, {Hao Chung} and Lin, {Chien Chung}",

note = "Publisher Copyright: {\textcopyright} Optica Publishing Group 2024, {\textcopyright} 2024 The Author(s); CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics ; Conference date: 05-05-2024 Through 10-05-2024",

year = "2024",

doi = "10.1364/cleo_at.2024.atu4j.3",

language = "English",

}

Chang, HJ, Chiang, KH, Jao, YM, Wang, YC, Huang, JJ, Kuo, HC & Lin, CC 2024, 'Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation', Paper presented at CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics, Charlotte, United States, 5/05/24 - 10/05/24. https://doi.org/10.1364/cleo_at.2024.atu4j.3

Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation. / Chang, Hao Jen; Chiang, Ke Hsi; Jao, Yu Ming et al.
2024. Paper presented at CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics, Charlotte, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation

AU - Chang, Hao Jen

AU - Chiang, Ke Hsi

AU - Jao, Yu Ming

AU - Wang, Yuan Chao

AU - Huang, Jian Jang

AU - Kuo, Hao Chung

AU - Lin, Chien Chung

PY - 2024

Y1 - 2024

N2 - We fabricated and demonstrated 2-micron InGaN micro LEDs. The devices can work with ALD passivation and exhibit high quantum efficiencies. As high as 7.36% of quantum efficiency can be obtained in 100-micron devices. The current-dependent emission peak shift can be seen as an indicator of device's thermal issues.

AB - We fabricated and demonstrated 2-micron InGaN micro LEDs. The devices can work with ALD passivation and exhibit high quantum efficiencies. As high as 7.36% of quantum efficiency can be obtained in 100-micron devices. The current-dependent emission peak shift can be seen as an indicator of device's thermal issues.

UR - http://www.scopus.com/inward/record.url?scp=85210400649&partnerID=8YFLogxK

U2 - 10.1364/cleo_at.2024.atu4j.3

DO - 10.1364/cleo_at.2024.atu4j.3

M3 - Paper

AN - SCOPUS:85210400649

T2 - CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics

Y2 - 5 May 2024 through 10 May 2024

ER -

Chang HJ, Chiang KH, Jao YM, Wang YC, Huang JJ, Kuo HC et al.. Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation. 2024. Paper presented at CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics, Charlotte, United States. doi: 10.1364/cleo_at.2024.atu4j.3

Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation

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