Investigation of Low Temperature Cu-Cu Direct Bonding with Pt Passivation Layer in 3D Integration

Demin Liu; Tsung Yi Kuo; Yu Wei Liu; Zhong Jie Hong; Ying Ting Chung; Tzu Chieh Chou; Han Wen Hu; Kuan Neng Chen

doi:10.1109/TCPMT.2021.3069085

Investigation of Low Temperature Cu-Cu Direct Bonding with Pt Passivation Layer in 3D Integration

Demin Liu, Tsung Yi Kuo, Yu Wei Liu, Zhong Jie Hong, Ying Ting Chung, Tzu Chieh Chou, Han Wen Hu, Kuan Neng Chen

Center for Semiconductor Technology Research

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Pt has been investigated as a metal passivation material to achieve low temperature Cu-Cu direct bonding process. With 10 nm Pt passivation layer capping on Cu surface, a good bonding surface with no oxides and small grain size can be obtained. During the low temperature bonding process, Cu atoms diffuse through the passivation layer and form a new layer without any pre-treatment. This bonding scheme with Pt passivation layer provides a solution for Cu low temperature bonding, with excellent bonding strength, good electrical performance and ability to endure temperature variation. In addition, both of chip and wafer level bonding process have been successful demonstrated, showing a high potential to be applied on 3D IC and heterogeneous integration.

Original language	English
Pages (from-to)	573 - 578
Number of pages	6
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	11
Issue number	4
DOIs	https://doi.org/10.1109/TCPMT.2021.3069085
State	Published - Apr 2021

Keywords

3D integration
Atomic layer deposition
Bonding
Cu bonding
Grain size
low temperature bonding
Passivation
Rough surfaces
Surface roughness
Surface treatment

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10.1109/TCPMT.2021.3069085

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@article{28b0e1eab5794703b8328af6c746ddca,

title = "Investigation of Low Temperature Cu-Cu Direct Bonding with Pt Passivation Layer in 3D Integration",

abstract = "Pt has been investigated as a metal passivation material to achieve low temperature Cu-Cu direct bonding process. With 10 nm Pt passivation layer capping on Cu surface, a good bonding surface with no oxides and small grain size can be obtained. During the low temperature bonding process, Cu atoms diffuse through the passivation layer and form a new layer without any pre-treatment. This bonding scheme with Pt passivation layer provides a solution for Cu low temperature bonding, with excellent bonding strength, good electrical performance and ability to endure temperature variation. In addition, both of chip and wafer level bonding process have been successful demonstrated, showing a high potential to be applied on 3D IC and heterogeneous integration.",

keywords = "3D integration, Atomic layer deposition, Bonding, Cu bonding, Grain size, low temperature bonding, Passivation, Rough surfaces, Surface roughness, Surface treatment",

author = "Demin Liu and Kuo, {Tsung Yi} and Liu, {Yu Wei} and Hong, {Zhong Jie} and Chung, {Ying Ting} and Chou, {Tzu Chieh} and Hu, {Han Wen} and Chen, {Kuan Neng}",

note = "Publisher Copyright: IEEE",

year = "2021",

month = apr,

doi = "10.1109/TCPMT.2021.3069085",

language = "English",

volume = "11",

pages = "573 -- 578",

journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",

issn = "2156-3950",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Investigation of Low Temperature Cu-Cu Direct Bonding with Pt Passivation Layer in 3D Integration

AU - Liu, Demin

AU - Kuo, Tsung Yi

AU - Liu, Yu Wei

AU - Hong, Zhong Jie

AU - Chung, Ying Ting

AU - Chou, Tzu Chieh

AU - Hu, Han Wen

AU - Chen, Kuan Neng

N1 - Publisher Copyright: IEEE

PY - 2021/4

Y1 - 2021/4

N2 - Pt has been investigated as a metal passivation material to achieve low temperature Cu-Cu direct bonding process. With 10 nm Pt passivation layer capping on Cu surface, a good bonding surface with no oxides and small grain size can be obtained. During the low temperature bonding process, Cu atoms diffuse through the passivation layer and form a new layer without any pre-treatment. This bonding scheme with Pt passivation layer provides a solution for Cu low temperature bonding, with excellent bonding strength, good electrical performance and ability to endure temperature variation. In addition, both of chip and wafer level bonding process have been successful demonstrated, showing a high potential to be applied on 3D IC and heterogeneous integration.

AB - Pt has been investigated as a metal passivation material to achieve low temperature Cu-Cu direct bonding process. With 10 nm Pt passivation layer capping on Cu surface, a good bonding surface with no oxides and small grain size can be obtained. During the low temperature bonding process, Cu atoms diffuse through the passivation layer and form a new layer without any pre-treatment. This bonding scheme with Pt passivation layer provides a solution for Cu low temperature bonding, with excellent bonding strength, good electrical performance and ability to endure temperature variation. In addition, both of chip and wafer level bonding process have been successful demonstrated, showing a high potential to be applied on 3D IC and heterogeneous integration.

KW - 3D integration

KW - Atomic layer deposition

KW - Bonding

KW - Cu bonding

KW - Grain size

KW - low temperature bonding

KW - Passivation

KW - Rough surfaces

KW - Surface roughness

KW - Surface treatment

UR - http://www.scopus.com/inward/record.url?scp=85103277728&partnerID=8YFLogxK

U2 - 10.1109/TCPMT.2021.3069085

DO - 10.1109/TCPMT.2021.3069085

M3 - Article

AN - SCOPUS:85103277728

SN - 2156-3950

VL - 11

SP - 573

EP - 578

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

IS - 4

ER -

Investigation of Low Temperature Cu-Cu Direct Bonding with Pt Passivation Layer in 3D Integration

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Keywords

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