Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition

Dun Bao Ruan; Po-Tsun Liu; Yu Chuan Chiu; Kai Zhi Kan; Min Chin Yu; Ta Chun Chien; Yi Heng Chen; Po Yi Kuo; Simon M. Sze

doi:10.1016/j.tsf.2018.02.036

Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition

Dun Bao Ruan, Po-Tsun Liu^*, Yu Chuan Chiu, Kai Zhi Kan, Min Chin Yu, Ta Chun Chien, Yi Heng Chen, Po Yi Kuo, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Amorphous Indium-Zinc-Tin-Oxide thin-film transistors (a-IZTO TFT) using different types of high-k materials (like HfO₂, ZrO₂ and Al₂O₃) as gate dielectric are studied in this work. All gate dielectric films were deposited by physical vapor deposition (PVD) process for better composition control. Compared with the traditional SiO₂ gate insulator, a high-k gate dielectric can reduce the operation voltage of TFT device significantly. The TFT device with ZrO₂ gate insulator exhibits a small subthreshold swing of 0.126 V/decade, high field-effect mobility of ~40.7 cm²/Vs, low threshold voltage of −0.05 V, and large On/Off current ratio of ~1.01 × 10⁷. The mechanisms for electrical improvements are also investigated. These results demonstrate the potential application of PVD-deposited ZrO₂ thin film as a promising gate dielectric in oxide-based thin-film transistors.

Original language	English
Pages (from-to)	885-890
Number of pages	6
Journal	Thin Solid Films
Volume	660
DOIs	https://doi.org/10.1016/j.tsf.2018.02.036
State	Published - 30 Aug 2018

Keywords

High-dielectric constant
Indium-Zinc-Tin-Oxide
Low voltage operation
Physical vapor deposition
Thin-film transistors

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10.1016/j.tsf.2018.02.036

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@article{d539ead38d7944f5869ca68bb2badf8f,

title = "Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition",

abstract = "Amorphous Indium-Zinc-Tin-Oxide thin-film transistors (a-IZTO TFT) using different types of high-k materials (like HfO2, ZrO2 and Al2O3) as gate dielectric are studied in this work. All gate dielectric films were deposited by physical vapor deposition (PVD) process for better composition control. Compared with the traditional SiO2 gate insulator, a high-k gate dielectric can reduce the operation voltage of TFT device significantly. The TFT device with ZrO2 gate insulator exhibits a small subthreshold swing of 0.126 V/decade, high field-effect mobility of ~40.7 cm2/Vs, low threshold voltage of −0.05 V, and large On/Off current ratio of ~1.01 × 107. The mechanisms for electrical improvements are also investigated. These results demonstrate the potential application of PVD-deposited ZrO2 thin film as a promising gate dielectric in oxide-based thin-film transistors.",

keywords = "High-dielectric constant, Indium-Zinc-Tin-Oxide, Low voltage operation, Physical vapor deposition, Thin-film transistors",

author = "Ruan, {Dun Bao} and Po-Tsun Liu and Chiu, {Yu Chuan} and Kan, {Kai Zhi} and Yu, {Min Chin} and Chien, {Ta Chun} and Chen, {Yi Heng} and Kuo, {Po Yi} and Sze, {Simon M.}",

year = "2018",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2018.02.036",

language = "English",

volume = "660",

pages = "885--890",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition

AU - Ruan, Dun Bao

AU - Liu, Po-Tsun

AU - Chiu, Yu Chuan

AU - Kan, Kai Zhi

AU - Yu, Min Chin

AU - Chien, Ta Chun

AU - Chen, Yi Heng

AU - Kuo, Po Yi

AU - Sze, Simon M.

PY - 2018/8/30

Y1 - 2018/8/30

N2 - Amorphous Indium-Zinc-Tin-Oxide thin-film transistors (a-IZTO TFT) using different types of high-k materials (like HfO2, ZrO2 and Al2O3) as gate dielectric are studied in this work. All gate dielectric films were deposited by physical vapor deposition (PVD) process for better composition control. Compared with the traditional SiO2 gate insulator, a high-k gate dielectric can reduce the operation voltage of TFT device significantly. The TFT device with ZrO2 gate insulator exhibits a small subthreshold swing of 0.126 V/decade, high field-effect mobility of ~40.7 cm2/Vs, low threshold voltage of −0.05 V, and large On/Off current ratio of ~1.01 × 107. The mechanisms for electrical improvements are also investigated. These results demonstrate the potential application of PVD-deposited ZrO2 thin film as a promising gate dielectric in oxide-based thin-film transistors.

AB - Amorphous Indium-Zinc-Tin-Oxide thin-film transistors (a-IZTO TFT) using different types of high-k materials (like HfO2, ZrO2 and Al2O3) as gate dielectric are studied in this work. All gate dielectric films were deposited by physical vapor deposition (PVD) process for better composition control. Compared with the traditional SiO2 gate insulator, a high-k gate dielectric can reduce the operation voltage of TFT device significantly. The TFT device with ZrO2 gate insulator exhibits a small subthreshold swing of 0.126 V/decade, high field-effect mobility of ~40.7 cm2/Vs, low threshold voltage of −0.05 V, and large On/Off current ratio of ~1.01 × 107. The mechanisms for electrical improvements are also investigated. These results demonstrate the potential application of PVD-deposited ZrO2 thin film as a promising gate dielectric in oxide-based thin-film transistors.

KW - High-dielectric constant

KW - Indium-Zinc-Tin-Oxide

KW - Low voltage operation

KW - Physical vapor deposition

KW - Thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=85042559565&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2018.02.036

DO - 10.1016/j.tsf.2018.02.036

M3 - Article

AN - SCOPUS:85042559565

SN - 0040-6090

VL - 660

SP - 885

EP - 890

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition

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Keywords

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