Investigation of low frequency noise in uniaxial strained PMOSFETs

Jack J Y Kuo; William P N Chen; Pin Su

doi:10.1109/VTSA.2009.5159301

Investigation of low frequency noise in uniaxial strained PMOSFETs

Jack J Y Kuo, William P N Chen, Pin Su

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |V_gst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the S_Id/I _d² is increased by the enhanced g_m/I _d for the strained device. Nevertheless, the S_Id/I _d² of the strained device is almost the same as the unstrained one at a given g_m/I_d. Furthermore, with the application of uniaxial compressive strain, the attenuation length λ is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced λ may result in a smaller S_Vg. In the high |V_gst| regime, the 1/f noise is dominated by the mobility-fluctuations and the S_Id/I_d² is increased due to the larger Hooge parameter for the strained device.

Original language	English
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	82-83
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159301
State	Published - 1 Dec 2009
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan Duration: 27 Apr 2009 → 29 Apr 2009

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country/Territory	Taiwan
City	Hsinchu
Period	27/04/09 → 29/04/09

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10.1109/VTSA.2009.5159301

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title = "Investigation of low frequency noise in uniaxial strained PMOSFETs",

abstract = "We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |Vgst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the SId/I d2 is increased by the enhanced gm/I d for the strained device. Nevertheless, the SId/I d2 of the strained device is almost the same as the unstrained one at a given gm/Id. Furthermore, with the application of uniaxial compressive strain, the attenuation length λ is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced λ may result in a smaller SVg. In the high |Vgst| regime, the 1/f noise is dominated by the mobility-fluctuations and the SId/Id2 is increased due to the larger Hooge parameter for the strained device.",

author = "Kuo, {Jack J Y} and Chen, {William P N} and Pin Su",

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pages = "82--83",

booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

note = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 ; Conference date: 27-04-2009 Through 29-04-2009",

}

Kuo, JJY, Chen, WPN & Su, P 2009, Investigation of low frequency noise in uniaxial strained PMOSFETs. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159301, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 82-83, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, 27/04/09. https://doi.org/10.1109/VTSA.2009.5159301

Investigation of low frequency noise in uniaxial strained PMOSFETs. / Kuo, Jack J Y; Chen, William P N; Su, Pin.
2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 82-83 5159301 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |Vgst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the SId/I d2 is increased by the enhanced gm/I d for the strained device. Nevertheless, the SId/I d2 of the strained device is almost the same as the unstrained one at a given gm/Id. Furthermore, with the application of uniaxial compressive strain, the attenuation length λ is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced λ may result in a smaller SVg. In the high |Vgst| regime, the 1/f noise is dominated by the mobility-fluctuations and the SId/Id2 is increased due to the larger Hooge parameter for the strained device.

AB - We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |Vgst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the SId/I d2 is increased by the enhanced gm/I d for the strained device. Nevertheless, the SId/I d2 of the strained device is almost the same as the unstrained one at a given gm/Id. Furthermore, with the application of uniaxial compressive strain, the attenuation length λ is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced λ may result in a smaller SVg. In the high |Vgst| regime, the 1/f noise is dominated by the mobility-fluctuations and the SId/Id2 is increased due to the larger Hooge parameter for the strained device.

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Investigation of low frequency noise in uniaxial strained PMOSFETs

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