Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance

Shih En Huang; Shih Han Lin; Pin Su

doi:10.1109/JEDS.2020.2966642

Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance

Shih En Huang, Shih Han Lin, Pin Su^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In_0.53Ga_0.47As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization P_r. In addition, the inversioncharge boosting for the In_0.53Ga_0.47As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In_0.53Ga_0.47As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.

Original language	English
Article number	8959139
Pages (from-to)	105-109
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	8
DOIs	https://doi.org/10.1109/JEDS.2020.2966642
State	Published - 14 Jan 2020

Keywords

CMOS
FinFET structure
InGaAs
Negative-capacitance FET (NCFET)
quantum capacitance

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10.1109/JEDS.2020.2966642

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title = "Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance",

abstract = "This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In0.53Ga0.47As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization Pr. In addition, the inversioncharge boosting for the In0.53Ga0.47As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In0.53Ga0.47As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.",

keywords = "CMOS, FinFET structure, InGaAs, Negative-capacitance FET (NCFET), quantum capacitance",

author = "Huang, {Shih En} and Lin, {Shih Han} and Pin Su",

year = "2020",

month = jan,

day = "14",

doi = "10.1109/JEDS.2020.2966642",

language = "English",

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journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance

AU - Huang, Shih En

AU - Lin, Shih Han

AU - Su, Pin

PY - 2020/1/14

Y1 - 2020/1/14

N2 - This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In0.53Ga0.47As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization Pr. In addition, the inversioncharge boosting for the In0.53Ga0.47As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In0.53Ga0.47As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.

AB - This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In0.53Ga0.47As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization Pr. In addition, the inversioncharge boosting for the In0.53Ga0.47As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In0.53Ga0.47As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.

KW - CMOS

KW - FinFET structure

KW - InGaAs

KW - Negative-capacitance FET (NCFET)

KW - quantum capacitance

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JO - IEEE Journal of the Electron Devices Society

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M1 - 8959139

ER -

Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance

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