Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers

J. S. Tsang; C. P. Lee; D. C. Liu; H. R. Chen; K. L. Tsai; Chia-Ming Tsai

doi:10.1063/1.354319

Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers

J. S. Tsang^*, C. P. Lee, D. C. Liu, H. R. Chen, K. L. Tsai, Chia-Ming Tsai

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of indium doping in the graded-index regions of the InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non-In-doped lasers, it has little effect on In-doped lasers.

Original language	English
Pages (from-to)	4882-4885
Number of pages	4
Journal	Journal of Applied Physics
Volume	74
Issue number	8
DOIs	https://doi.org/10.1063/1.354319
State	Published - 1993

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title = "Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers",

abstract = "The effect of indium doping in the graded-index regions of the InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non-In-doped lasers, it has little effect on In-doped lasers.",

author = "Tsang, {J. S.} and Lee, {C. P.} and Liu, {D. C.} and Chen, {H. R.} and Tsai, {K. L.} and Chia-Ming Tsai",

year = "1993",

doi = "10.1063/1.354319",

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pages = "4882--4885",

journal = "Journal of Applied Physics",

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T1 - Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers

AU - Tsang, J. S.

AU - Lee, C. P.

AU - Liu, D. C.

AU - Chen, H. R.

AU - Tsai, K. L.

AU - Tsai, Chia-Ming

PY - 1993

Y1 - 1993

N2 - The effect of indium doping in the graded-index regions of the InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non-In-doped lasers, it has little effect on In-doped lasers.

AB - The effect of indium doping in the graded-index regions of the InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a proper amount of In doping in the graded AlGaAs region. This result is attributed to an improvement in material quality due to a reduction in group III vacancies. The effect of thermal treatment on laser performance has also been studied. Although high temperature annealing can significantly improve non-In-doped lasers, it has little effect on In-doped lasers.

UR - http://www.scopus.com/inward/record.url?scp=0027687144&partnerID=8YFLogxK

U2 - 10.1063/1.354319

DO - 10.1063/1.354319

M3 - Article

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SN - 0021-8979

VL - 74

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EP - 4885

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Investigation of indium doping in InGaAs/GaAs/AlGaAs graded-index separated confinement heterostructure lasers

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