Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration

Cheng Hao Chiang; Yu Chen Hu; Kuo Hua Chen; Chi Tsung Chiu; Ching Te Chuang; Wei Hwang; Jin-Chern Chiou; Ho Ming Tong; Kuan-Neng Chen

doi:10.1109/IMPACT.2012.6420289

Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration

Cheng Hao Chiang, Yu Chen Hu, Kuo Hua Chen, Chi Tsung Chiu, Ching Te Chuang, Wei Hwang, Jin-Chern Chiou, Ho Ming Tong, Kuan-Neng Chen^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.

Original language	English
Title of host publication	2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
Pages	56-59
Number of pages	4
DOIs	https://doi.org/10.1109/IMPACT.2012.6420289
State	Published - 1 Dec 2012
Event	2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Taipei, Taiwan Duration: 24 Oct 2012 → 26 Oct 2012

Publication series

Name	Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)	2150-5934
ISSN (Electronic)	2150-5942

Conference

Conference	2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
Country/Territory	Taiwan
City	Taipei
Period	24/10/12 → 26/10/12

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10.1109/IMPACT.2012.6420289

Cite this

Chiang, C. H., Hu, Y. C., Chen, K. H., Chiu, C. T., Chuang, C. T., Hwang, W., Chiou, J-C., Tong, H. M., & Chen, K-N. (2012). Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration. In 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings (pp. 56-59). [6420289] (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). https://doi.org/10.1109/IMPACT.2012.6420289

Chiang, Cheng Hao ; Hu, Yu Chen ; Chen, Kuo Hua et al. / Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration. 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings. 2012. pp. 56-59 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT).

@inproceedings{5cd2e16fc04f4185986cc308daa9e4c2,

title = "Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration",

abstract = "Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.",

author = "Chiang, {Cheng Hao} and Hu, {Yu Chen} and Chen, {Kuo Hua} and Chiu, {Chi Tsung} and Chuang, {Ching Te} and Wei Hwang and Jin-Chern Chiou and Tong, {Ho Ming} and Kuan-Neng Chen",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/IMPACT.2012.6420289",

language = "English",

isbn = "9781467316385",

series = "Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT",

pages = "56--59",

booktitle = "2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings",

note = "2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 ; Conference date: 24-10-2012 Through 26-10-2012",

}

Chiang, CH, Hu, YC, Chen, KH, Chiu, CT, Chuang, CT, Hwang, W, Chiou, J-C, Tong, HM & Chen, K-N 2012, Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration. in 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings., 6420289, Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT, pp. 56-59, 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012, Taipei, Taiwan, 24/10/12. https://doi.org/10.1109/IMPACT.2012.6420289

Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration. / Chiang, Cheng Hao; Hu, Yu Chen; Chen, Kuo Hua et al.
2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings. 2012. p. 56-59 6420289 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Chiang, Cheng Hao

AU - Hu, Yu Chen

AU - Chen, Kuo Hua

AU - Chiu, Chi Tsung

AU - Chuang, Ching Te

AU - Hwang, Wei

AU - Chiou, Jin-Chern

AU - Tong, Ho Ming

AU - Chen, Kuan-Neng

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.

AB - Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.

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DO - 10.1109/IMPACT.2012.6420289

M3 - Conference contribution

AN - SCOPUS:84874270913

SN - 9781467316385

T3 - Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT

SP - 56

EP - 59

BT - 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings

T2 - 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012

Y2 - 24 October 2012 through 26 October 2012

ER -

Chiang CH, Hu YC, Chen KH, Chiu CT, Chuang CT, Hwang W et al. Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration. In 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings. 2012. p. 56-59. 6420289. (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). doi: 10.1109/IMPACT.2012.6420289

Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration

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