Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration

Cheng Hao Chiang, Yu Chen Hu, Kuo Hua Chen, Chi Tsung Chiu, Ching Te Chuang, Wei Hwang, Jin-Chern Chiou, Ho Ming Tong, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.

Original languageEnglish
Title of host publication2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
Pages56-59
Number of pages4
DOIs
StatePublished - 2012
Event2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Taipei, Taiwan
Duration: 24 Oct 201226 Oct 2012

Publication series

NameProceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)2150-5934
ISSN (Electronic)2150-5942

Conference

Conference2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
Country/TerritoryTaiwan
CityTaipei
Period24/10/1226/10/12

Fingerprint

Dive into the research topics of 'Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration'. Together they form a unique fingerprint.

Cite this