Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

Shih En Huang; Chien Lin Yu; Pin Su

doi:10.1109/TED.2019.2907994

Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

Shih En Huang
, Chien Lin Yu
, Pin Su^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

This paper investigates the fin-width (W_Fin) sensitivity of threshold voltage (V_T) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller V_T sensitivity to W_Fin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the V_Tsensitivity to W_Finfor NC-FinFETs. Our study may provide insights for future scaling of FinFETs.

Original language	English
Article number	8689074
Pages (from-to)	2538-2543
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	6
DOIs	https://doi.org/10.1109/TED.2019.2907994
State	Published - Jun 2019

Keywords

CMOS
FinFET
InGaAs
negative-capacitance field-effect transistor (NCFET)
quantum confinement (QC)

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10.1109/TED.2019.2907994

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@article{470b69eb7f3d46f4aec5ffc07dc0737f,

title = "Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect",

abstract = "This paper investigates the fin-width (WFin) sensitivity of threshold voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to WFin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the VTsensitivity to WFinfor NC-FinFETs. Our study may provide insights for future scaling of FinFETs.",

keywords = "CMOS, FinFET, InGaAs, negative-capacitance field-effect transistor (NCFET), quantum confinement (QC)",

author = "Huang, \{Shih En\} and Yu, \{Chien Lin\} and Pin Su",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2019",

month = jun,

doi = "10.1109/TED.2019.2907994",

language = "English",

volume = "66",

pages = "2538--2543",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

AU - Huang, Shih En

AU - Yu, Chien Lin

AU - Su, Pin

PY - 2019/6

Y1 - 2019/6

N2 - This paper investigates the fin-width (WFin) sensitivity of threshold voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to WFin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the VTsensitivity to WFinfor NC-FinFETs. Our study may provide insights for future scaling of FinFETs.

AB - This paper investigates the fin-width (WFin) sensitivity of threshold voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to WFin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the VTsensitivity to WFinfor NC-FinFETs. Our study may provide insights for future scaling of FinFETs.

KW - CMOS

KW - FinFET

KW - InGaAs

KW - negative-capacitance field-effect transistor (NCFET)

KW - quantum confinement (QC)

UR - https://www.scopus.com/pages/publications/85065862298

U2 - 10.1109/TED.2019.2907994

DO - 10.1109/TED.2019.2907994

M3 - Article

AN - SCOPUS:85065862298

SN - 0018-9383

VL - 66

SP - 2538

EP - 2543

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 8689074

ER -

Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

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