Abstract
This paper investigates the fin-width (WFin) sensitivity of threshold voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to WFin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the VTsensitivity to WFinfor NC-FinFETs. Our study may provide insights for future scaling of FinFETs.
Original language | English |
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Article number | 8689074 |
Pages (from-to) | 2538-2543 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 66 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2019 |
Keywords
- CMOS
- FinFET
- InGaAs
- negative-capacitance field-effect transistor (NCFET)
- quantum confinement (QC)