Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs

Shih En Huang; Pin Su

doi:10.1109/EDTM.2018.8421518

Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs

Shih En Huang, Pin Su

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

This work investigates the fin-width (W_Fin) sensitivity of threshold-voltage (V_T) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretical quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that, due to the action of negative capacitance, the NC-FinFET can possess smaller V_T sensitivity to W_Fin than the FinFET counterpart. Besides, the V_T sensitivity to W_Fin can be further reduced with increasing dielectric constant of the spacer due to the increased internal voltage gain of the NC-FinFET.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	16-18
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421518
State	Published - 26 Jul 2018
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: 13 Mar 2018 → 16 Mar 2018

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	13/03/18 → 16/03/18

Keywords

CMOS
InGaAs
Negative capacitance FET

Access to Document

10.1109/EDTM.2018.8421518

Cite this

Huang, S. E., & Su, P. (2018). Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 16-18). Article 8421518 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421518

Huang, Shih En ; Su, Pin. / Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 16-18 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

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title = "Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs",

abstract = "This work investigates the fin-width (WFin) sensitivity of threshold-voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretical quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that, due to the action of negative capacitance, the NC-FinFET can possess smaller VT sensitivity to WFin than the FinFET counterpart. Besides, the VT sensitivity to WFin can be further reduced with increasing dielectric constant of the spacer due to the increased internal voltage gain of the NC-FinFET.",

keywords = "CMOS, InGaAs, Negative capacitance FET",

author = "Huang, {Shih En} and Pin Su",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421518",

language = "English",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "16--18",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

address = "美國",

note = "2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

}

Huang, SE & Su, P 2018, Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421518, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 16-18, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 13/03/18. https://doi.org/10.1109/EDTM.2018.8421518

Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs. / Huang, Shih En; Su, Pin.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 16-18 8421518 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs

AU - Huang, Shih En

AU - Su, Pin

PY - 2018/7/26

Y1 - 2018/7/26

N2 - This work investigates the fin-width (WFin) sensitivity of threshold-voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretical quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that, due to the action of negative capacitance, the NC-FinFET can possess smaller VT sensitivity to WFin than the FinFET counterpart. Besides, the VT sensitivity to WFin can be further reduced with increasing dielectric constant of the spacer due to the increased internal voltage gain of the NC-FinFET.

AB - This work investigates the fin-width (WFin) sensitivity of threshold-voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretical quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that, due to the action of negative capacitance, the NC-FinFET can possess smaller VT sensitivity to WFin than the FinFET counterpart. Besides, the VT sensitivity to WFin can be further reduced with increasing dielectric constant of the spacer due to the increased internal voltage gain of the NC-FinFET.

KW - CMOS

KW - InGaAs

KW - Negative capacitance FET

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U2 - 10.1109/EDTM.2018.8421518

DO - 10.1109/EDTM.2018.8421518

M3 - Conference contribution

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SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 16

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BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Huang SE, Su P. Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 16-18. 8421518. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421518

Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs

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