TY - GEN
T1 - Investigation of ferroelectric granularity for double-gate negative-capacitance FETs considering position and number fluctuations
AU - Fan, Che Lun
AU - Tseng, Kuei Yang
AU - Liu, You Sheng
AU - Su, Pin
PY - 2019/6
Y1 - 2019/6
N2 - Using TCAD atomistic simulation, this work investigates the ferroelectric layer granularity of double-gate (DG) negative-capacitance FETs (NCFET) by considering both position and number fluctuations. Our study indicates that the impacts of the ferroelectric ratio on threshold voltage (VT) and subthreshold swing (SS) variations exhibit non-monotonic characteristics, and it is important to include the number fluctuation of the ferroelectric grain to accurately account for the overall variation. In addition, smaller grain size not only reduces the VT and SS variations, but also improves the mean value of the subthreshold swing.
AB - Using TCAD atomistic simulation, this work investigates the ferroelectric layer granularity of double-gate (DG) negative-capacitance FETs (NCFET) by considering both position and number fluctuations. Our study indicates that the impacts of the ferroelectric ratio on threshold voltage (VT) and subthreshold swing (SS) variations exhibit non-monotonic characteristics, and it is important to include the number fluctuation of the ferroelectric grain to accurately account for the overall variation. In addition, smaller grain size not only reduces the VT and SS variations, but also improves the mean value of the subthreshold swing.
UR - http://www.scopus.com/inward/record.url?scp=85070870173&partnerID=8YFLogxK
U2 - 10.23919/SNW.2019.8782963
DO - 10.23919/SNW.2019.8782963
M3 - Conference contribution
AN - SCOPUS:85070870173
T3 - 2019 Silicon Nanoelectronics Workshop, SNW 2019
BT - 2019 Silicon Nanoelectronics Workshop, SNW 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th Silicon Nanoelectronics Workshop, SNW 2019
Y2 - 9 June 2019 through 10 June 2019
ER -