Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation

Pi-Ho Hu; Yu Sheng Wu; Pin Su

doi:10.1109/EDSSC.2008.4760684

Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation

Pi-Ho Hu^*, Yu Sheng Wu, Pin Su

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (L_g) to channel thickness (T_ch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (T_BOX) and back-gate bias (V _back-gate) on the electrostatic integrity of GeOI devices are also examined.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760684
State	Published - 2008
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China Duration: 8 Dec 2008 → 10 Dec 2008

Publication series

Name	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	China
City	Hong Kong
Period	8/12/08 → 10/12/08

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10.1109/EDSSC.2008.4760684

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Hu, P.-H., Wu, Y. S., & Su, P. (2008). Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC Article 4760684 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760684

@inproceedings{da2f6fbb8eee47a19ecbfb499316ad88,

title = "Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation",

abstract = "The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (TBOX) and back-gate bias (V back-gate) on the electrostatic integrity of GeOI devices are also examined.",

author = "Pi-Ho Hu and Wu, {Yu Sheng} and Pin Su",

year = "2008",

doi = "10.1109/EDSSC.2008.4760684",

language = "English",

isbn = "9781424425396",

series = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

}

Hu, P-H, Wu, YS & Su, P 2008, Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760684, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 8/12/08. https://doi.org/10.1109/EDSSC.2008.4760684

Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation. / Hu, Pi-Ho; Wu, Yu Sheng; Su, Pin.
2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760684 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hu, Pi-Ho

AU - Wu, Yu Sheng

AU - Su, Pin

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N2 - The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (TBOX) and back-gate bias (V back-gate) on the electrostatic integrity of GeOI devices are also examined.

AB - The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (TBOX) and back-gate bias (V back-gate) on the electrostatic integrity of GeOI devices are also examined.

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DO - 10.1109/EDSSC.2008.4760684

M3 - Conference contribution

AN - SCOPUS:63249087173

SN - 9781424425396

T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

ER -

Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation

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