Abstract
In this paper, electrical characteristics of small nanowire fin field-effect transistor (FinFET) are investigated by using a three-dimensional quantum correction simulation. Taking several important electrical characteristics as evaluation criteria, two different nanowire FinFETs, the surrounding-gate and omega-shaped-gate devices, are examined and compared with respect to different ratios of the gate coverage. By calculating the ratio of the on/off current, the turn-on resistance, subthreshold swing, drain-induced channel barrier height lowing, and gate capacitance, it is found that the difference of the electrical characteristics between the surrounding-gate (i.e., the omega-shaped-gate device with 100% coverage) and the omega-shaped-gate nanowire FinFET with 70% coverage is insignificant. The examination presented here is useful in the fabrication of small omega-shaped-gate nanowire FinFETs. It clarifies the main difference between the surrounding-gate and omega-shaped-gate nanowire FinFETs and exhibits a valuable result that the omega-shaped-gate device with 70% coverage plays an optimal candidate of the nanodevice structure when we consider both the device performance and manufacturability.
| Original language | English |
|---|---|
| Pages (from-to) | 510-516 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Nanotechnology |
| Volume | 4 |
| Issue number | 5 |
| DOIs | |
| State | Published - Sep 2005 |
Keywords
- Coverage ratio
- Device structure
- Fabrication
- Fin field-effect transistor (FinFET)
- Gate capacitance
- Nanodevice
- Nanowire
- Omega-shaped-gate
- On/off ratio
- Process technique
- Quantum correction model
- Semiconductor devices
- Subthreshold swing (SS)