Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

Po Min Tu; Chun-Yen Chang; Shih Cheng Huang; Ching Hsueh Chiu; Jet Rung Chang; Wei Ting Chang; Dong Sing Wuu; Hsiao-Wen Zan; Chien-Chung Lin; Hao-Chung Kuo; Chih Peng Hsu

doi:10.1063/1.3591967

Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

Po Min Tu^*, Chun-Yen Chang, Shih Cheng Huang, Ching Hsueh Chiu, Jet Rung Chang, Wei Ting Chang, Dong Sing Wuu, Hsiao-Wen Zan, Chien-Chung Lin, Hao-Chung Kuo, Chih Peng Hsu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers.

Original language	English
Article number	211107
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	21
DOIs	https://doi.org/10.1063/1.3591967
State	Published - 23 May 2011

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10.1063/1.3591967

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title = "Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier",

abstract = "The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers.",

author = "Tu, {Po Min} and Chun-Yen Chang and Huang, {Shih Cheng} and Chiu, {Ching Hsueh} and Chang, {Jet Rung} and Chang, {Wei Ting} and Wuu, {Dong Sing} and Hsiao-Wen Zan and Chien-Chung Lin and Hao-Chung Kuo and Hsu, {Chih Peng}",

year = "2011",

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doi = "10.1063/1.3591967",

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T1 - Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

AU - Tu, Po Min

AU - Chang, Chun-Yen

AU - Huang, Shih Cheng

AU - Chiu, Ching Hsueh

AU - Chang, Jet Rung

AU - Chang, Wei Ting

AU - Wuu, Dong Sing

AU - Zan, Hsiao-Wen

AU - Lin, Chien-Chung

AU - Kuo, Hao-Chung

AU - Hsu, Chih Peng

PY - 2011/5/23

Y1 - 2011/5/23

N2 - The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers.

AB - The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers.

UR - http://www.scopus.com/inward/record.url?scp=79959407365&partnerID=8YFLogxK

U2 - 10.1063/1.3591967

DO - 10.1063/1.3591967

M3 - Article

AN - SCOPUS:79959407365

SN - 0003-6951

VL - 98

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211107

ER -

Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

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