Investigation of deposition rate effects on the current-voltage characteristics of organic dynamic random access bistable devices

Tzu Yueh Chang*, Szu Yuan Chen, Po-Tsung Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We investigate organic dynamic random access bistable devices with Al/Alq3/n-type Si structure at different deposition rates. Each of them contains a heterostructure, and only two-layer deposition is needed in this structure. Current-voltage characteristic similar to that of metal/organic semiconductor/metal structure, the three-layer structure widely used for organic memory devices, is obtained. Moreover, we are able to modify the electrical properties by utilizing appropriate deposition rates. This device shows extremely simple fabrication process and great potential in future advanced organic flexible display.

Original languageEnglish
Pages (from-to)241-244
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume38
Issue number1
DOIs
StatePublished - 1 Jan 2007
Event2007 SID International Symposium - Long Beach, CA, United States
Duration: 23 May 200725 May 2007

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