We investigate organic dynamic random access bistable devices with Al/Alq3/n-type Si structure at different deposition rates. Each of them contains a heterostructure, and only two-layer deposition is needed in this structure. Current-voltage characteristic similar to that of metal/organic semiconductor/metal structure, the three-layer structure widely used for organic memory devices, is obtained. Moreover, we are able to modify the electrical properties by utilizing appropriate deposition rates. This device shows extremely simple fabrication process and great potential in future advanced organic flexible display.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Jan 2007|
|Event||2007 SID International Symposium - Long Beach, CA, United States|
Duration: 23 May 2007 → 25 May 2007