Investigation of defect free SiGe nanowire biosensor modified by dual plasma technology

Yi Ming Chen; Tai Yuan Chang; Chiung Hui Lai; Kow-Ming Chang; Chu Feng Chen; Yi Lung Lai; Allen Jong Woei Whang; Hui Lung Lai; Terng Ren Hsu

doi:10.1166/jnn.2016.11919

Investigation of defect free SiGe nanowire biosensor modified by dual plasma technology

Yi Ming Chen, Tai Yuan Chang, Chiung Hui Lai^*, Kow-Ming Chang, Chu Feng Chen, Yi Lung Lai, Allen Jong Woei Whang, Hui Lung Lai, Terng Ren Hsu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Semiconductor nanowires (NWs) have been extensively investigated and discussed in various fields due to their unique physical properties. In this paper, we successfully produce SiGe NWs biosensor by VLSI technology. We propose the dual plasma technology with CF₄ plasma pre-treatment and N₂ plasma post-treatment for repairs of defects as well as optimization of SiGe NWs biosensor. The results indicate that sensitivity (S) of the biosensor with dual plasma technology has significantly improved at least 32.8%, suitable for producing industrial SiGe NWs biosensor in the future.

Original language	English
Pages (from-to)	1454-1459
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	16
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2016.11919
State	Published - 1 Feb 2016

Keywords

Biosensors
Dual plasma treatment
Oxidation
Sensitivity
Sige nanowire
Surface state

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10.1166/jnn.2016.11919

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title = "Investigation of defect free SiGe nanowire biosensor modified by dual plasma technology",

abstract = "Semiconductor nanowires (NWs) have been extensively investigated and discussed in various fields due to their unique physical properties. In this paper, we successfully produce SiGe NWs biosensor by VLSI technology. We propose the dual plasma technology with CF4 plasma pre-treatment and N2 plasma post-treatment for repairs of defects as well as optimization of SiGe NWs biosensor. The results indicate that sensitivity (S) of the biosensor with dual plasma technology has significantly improved at least 32.8%, suitable for producing industrial SiGe NWs biosensor in the future.",

keywords = "Biosensors, Dual plasma treatment, Oxidation, Sensitivity, Sige nanowire, Surface state",

author = "Chen, {Yi Ming} and Chang, {Tai Yuan} and Lai, {Chiung Hui} and Kow-Ming Chang and Chen, {Chu Feng} and Lai, {Yi Lung} and Whang, {Allen Jong Woei} and Lai, {Hui Lung} and Hsu, {Terng Ren}",

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AU - Chen, Yi Ming

AU - Chang, Tai Yuan

AU - Lai, Chiung Hui

AU - Chang, Kow-Ming

AU - Chen, Chu Feng

AU - Lai, Yi Lung

AU - Whang, Allen Jong Woei

AU - Lai, Hui Lung

AU - Hsu, Terng Ren

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Semiconductor nanowires (NWs) have been extensively investigated and discussed in various fields due to their unique physical properties. In this paper, we successfully produce SiGe NWs biosensor by VLSI technology. We propose the dual plasma technology with CF4 plasma pre-treatment and N2 plasma post-treatment for repairs of defects as well as optimization of SiGe NWs biosensor. The results indicate that sensitivity (S) of the biosensor with dual plasma technology has significantly improved at least 32.8%, suitable for producing industrial SiGe NWs biosensor in the future.

AB - Semiconductor nanowires (NWs) have been extensively investigated and discussed in various fields due to their unique physical properties. In this paper, we successfully produce SiGe NWs biosensor by VLSI technology. We propose the dual plasma technology with CF4 plasma pre-treatment and N2 plasma post-treatment for repairs of defects as well as optimization of SiGe NWs biosensor. The results indicate that sensitivity (S) of the biosensor with dual plasma technology has significantly improved at least 32.8%, suitable for producing industrial SiGe NWs biosensor in the future.

KW - Biosensors

KW - Dual plasma treatment

KW - Oxidation

KW - Sensitivity

KW - Sige nanowire

KW - Surface state

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JO - Journal of Nanoscience and Nanotechnology

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Investigation of defect free SiGe nanowire biosensor modified by dual plasma technology

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